IP Library Granted Patent US 9,653,773
Granted Patent B2
US 9,653,773 · App. 14/395,176 · Granted May 16, 2017

Slow wave RF propagation line including a network of nanowires

Inventors: Philippe Ferrari (Sonnaz, FR); Gustavo Pamplona Rehder (Sao Paulo, BR); Ariana Serrano (Sao Paulo, BR); Florence Podevin (Grenoble, FR); Anne-Laure Franc (Grenoble, FR)
Assignees: UNIVERSITE GRENOBLE ALPES; INSTITUTE POLYTECHNIQUE DE GRENOBLE; UNIVERSIDADE DE SAO PAULO USP
H01P9/00H01P3/00H01P3/003H01P3/082
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Quick Facts
Patent No.
US 9,653,773
App. No.
14/395,176
Granted
May 16, 2017
Kind
B2
Abstract

The instant disclosure describes a radiofrequency propagation line including a conducting strip connected to a conducting plane parallel to the plane of the conducting strip, wherein the conducting plane includes a network of nanowires made of an electrically conductive, non-magnetic material extending orthogonally to the plane of the conducting strip, in the direction of said conducting strip.

Claims (6)

1. A radiofrequency propagation line comprising a conductive strip formed on a first insulating layer having a first thickness, h1, associated with a conductive plane parallel to the plane of said strip, wherein the conductive plane comprises a network of nanowires made of an electrically-conductive and non-magnetic material extending through a second insulating layer having a second thickness, h2, so as to contact the first insulating layer, orthogonally to the plane of the conductive strip, towards said strip, a ratio h1/h2 between the thicknesses of the first and second insulating layers being smaller than 0.05.

2. The propagation line of claim 1 , wherein the second insulating layer is a ceramic layer formed on a conductive plane, the ceramic layer being itself coated with the first insulating layer.

3. The propagation line of claim 2 , wherein the ceramic layer is an alumina layer.

4. The propagation line of claim 1 , wherein the first thickness, h1, of the first insulating layer is in the range from 0.5 to 2 μm and the network of nanowires have a length from 50 μm to 1 mm.

5. The propagation line of claim 1 , wherein each nanowire in the network of nanowires has a diameter from 30 to 200 nm and a spacing between the nanowires from 60 to 450 nm.

6. A radiofrequency component support comprising, under a first insulating layer having a first thickness, h1, a second insulating layer having a second thickness, h2, the second insulating layer crossed by nanowires connected to a conductive plane, a ratio h1/h2 being smaller than 0.05.

Assignments (2)
MERGER AND CHANGE OF NAME Recorded Nov 9, 2016
From: UNIVERSITE JOSEPH FOURIER; UNIVERSITE GRENOBLE ALPES
To: UNIVERSITE GRENOBLE ALPES
Reel/Frame 040272/0885 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2014
From: FERRARI, PHILIPPE; REHDER, GUSTAVO PAMPLONA; SERRANO, ARIANA; PODEVIN, FLORENCE; FRANC, ANNE-LAURE
To: UNIVERSITE JOSEPH FOURIER; INSTITUTE POLYTECHNIQUE DE GRENOBLE; UNIVERSIDADE DE SAO PAULO USP
Reel/Frame 034594/0066 →
Priority Claims (1)
FR 12 53759 · Apr 24, 2012 · national
Continuity (1)
Related Publication 20150070110A1 · Mar 12, 2015