Semiconductor structure with aligning mark and method of forming the same
The present invention provides a semiconductor structure comprising a wafer and an aligning mark. The wafer has a dicing region which comprises a central region, a middle region surrounds the central region, and a peripheral region surrounds the middle region. The aligning mark is disposed in the dicing region, wherein the alignment mark is a mirror symmetrical pattern. The aligning mark comprises a plurality of second patterns in the middle region and a plurality of third patterns disposed in peripheral region, wherein each third pattern comprises a plurality of lines, and a width of the line is 10 times less than a width of the L-shapes. The present invention further provides a method of forming the same.
1. A semiconductor structure, comprising:
a wafer having a dicing region which comprises a central region, a middle region surrounds the central region, and a peripheral region surrounds the middle region;
an aligning mark disposed in the dicing region, wherein the alignment mark is a mirror symmetrical pattern and comprises:
a plurality of second patterns in the middle region; and
a plurality of third patterns disposed in peripheral region, wherein each third pattern comprises a plurality of lines, and a width of the line is 10 times less than a width of the second pattern.
2. The semiconductor structure according to claim 1 , wherein the lines in each third pattern are divided into two outer lines and a plurality of inner lines, wherein the outer line has a width greater than that of the inner line.
3. The semiconductor structure according to claim 2 , wherein the width of the outer line is more than five times greater than the width of the inner line.
4. The semiconductor structure according to claim 1 , wherein the aligning mark is symmetrical by an x axis and a y axis, and the x axis intersects the y axis at a center of the aligning mark.
5. The semiconductor structure according to claim 1 , wherein the lines in a part of the third patterns are parallel to the x axis and the lines in the other part of the third patterns are parallel to the y axis.
6. The semiconductor structure according to claim 1 , further comprising a first pattern in the central region.
7. The semiconductor structure according to claim 6 , wherein the first pattern is a hollow square.
8. The semiconductor structure according to claim 6 , wherein the width of the line is 10 times less than a width of the hollow square.
9. The semiconductor structure according to claim 1 , wherein the third pattern has a square contour.
10. The semiconductor structure according to claim 1 , wherein the third patterns are further disposed in the second region between the second patterns.