Formation of connectors without UBM

1. A method comprising:

forming a conductive feature over a substrate;

forming a dielectric layer covering the conductive feature;

forming an opening in the dielectric layer to reveal a portion of the conductive feature;

disposing a compound into the opening, wherein the compound comprises a flux and a polymer;

placing a solder ball over the compound; and

reflowing the solder ball to form a solder region, wherein the solder region contacts the conductive feature, and after the reflowing, the compound comprises a bottom surface spaced apart from a top surface of the conductive feature by the dielectric layer.

2. The method of claim 1 , wherein after the reflowing, the compound comprises a first portion contacting a sidewall of a mid-section of the solder ball, and the first portion comprises a bottom surface in contact with a top surface of the dielectric layer.

3. The method of claim 2 , wherein after the reflowing, the compound further comprises a second portion in a recess of the dielectric layer, wherein the second portion is physically separated from the first portion.

4. The method of claim 1 , wherein after the reflowing, the compound comprises:

a first portion in a recess of the dielectric layer, and in a region formed by a bottom surface of the solder region, a sidewall of the dielectric layer, and a top surface of the conductive feature; and

a second portion over a top surface of the dielectric layer, wherein the second portion contacts a mid-section of the solder region.

5. The method of claim 1 further comprising bonding a package component to the solder region, wherein between the reflowing and the bonding, no flux clean step is performed.

6. The method of claim 5 , wherein the package component is selected from the group consisting essentially of a device die, a package substrate, and a printed circuit board (PCB).

7. The method of claim 5 further comprising disposing an underfill between the dielectric layer and the package component, wherein the underfill is in physical contact with the compound.

8. The method of claim 5 further comprising disposing an underfill between the dielectric layer and the package component, wherein the underfill is physically separated from the compound.

9. A method comprising:

forming a first package component comprising:

forming a conductive feature;

forming a dielectric layer over the conductive feature;

forming a solder region over the conductive feature, wherein a portion of the solder region extends into the dielectric layer; and

dispensing a compound comprising a first portion in contact with the conductive feature and the dielectric layer, wherein the compound comprises flux and a polymer, and the first portion of the compound comprises a bottom surface spaced apart from a top surface of the conductive feature by the dielectric layer; and

bonding the first package component to a second package component

wherein after the bonding, the second package component is bonded to the solder region.

10. The method of claim 9 further comprising disposing an underfill between the dielectric layer and the second package component, wherein the underfill is in physical contact with the compound.

11. The method of claim 9 further comprising:

before the bonding, forming the dielectric layer covering the conductive feature;

forming an opening in the dielectric layer to reveal a portion of the conductive feature; and

disposing the compound into the opening.

12. The method of claim 11 further comprising:

placing a solder ball over the compound; and

reflowing the solder ball to form a solder region, wherein the solder region contacts the conductive feature.

13. The method of claim 12 , wherein the reflowing separates the compound into the first portion and a second portion physically separated from the first portion, wherein the second portion is in a recess of the dielectric layer.

14. A method comprising:

forming a passivation layer comprising a portion over a metal pad;

forming a post-passivation interconnect (PPI) electrically coupled to the metal pad, wherein the PPI comprises at least a portion over the metal pad and the passivation layer;

forming a polymer layer over the PPI;

forming an opening in the polymer layer;

filling a compound into the opening, wherein the compound is in physical contact with the PPI, and the compound comprises a flux and a polymer, and wherein the polymer layer is a surface layer of a wafer, and in the filling the compound, the compound is applied as a blanket layer over the wafer, and comprises:

first portions in a plurality of openings in the polymer layer; and

second portions interconnecting the first portions into a continuous compound;

placing a solder ball on the compound; and

reflowing the solder ball to form a solder region joined with the PPI.

15. The method of claim 14 further comprising bonding a package component to the solder region, wherein the package component is selected from the group consisting essentially of a device die, a package substrate, and a printed circuit board (PCB), and wherein between the reflowing and the bonding, no flux clean step is performed.

16. The method of claim 14 , wherein after the reflowing, the compound extends into a region between the PPI, the polymer layer, and the solder region.

17. The method of claim 1 , wherein the compound is disposed as separate portions in a plurality of openings in the dielectric layer, and the separate portions are not interconnected into a continuous layer.

18. The method of claim 1 , wherein the compound is disposed as comprising first portions in a plurality of openings in the dielectric layer, and second portions interconnecting the first portions into a continuous layer.

19. The method of claim 1 , wherein the dielectric layer is a surface layer of a wafer, and the compound is applied as a blanket layer over the wafer.

20. The method of claim 9 , wherein the dielectric layer is a surface layer of a wafer, and the compound is disposed as a blanket layer over the wafer.