Method of preventing drain and read disturbances in non-volatile memory device
A source-drain structure and method of manufacturing the same are disclosed. The source-drain structure includes a substrate containing a drain region and a source region. The drain region includes a lightly-doped ultra-shallow junction and a heavily-doped region, and a drain-substrate junction disposed in the vicinity of a junction between a side portion and a bottom portion of the lightly-doped ultra-shallow junction and the substrate, a plurality of impurity ions in the drain-substrate junction and a plurality of impurity ions in the lightly-doped ultra-shallow junction are opposite-conductivity type ions. The drain-substrate junction can smooth out the steep surface of the lightly-doped ultra-shallow junction to minimize the maximum electric field and reduce the ion flow close to the channel, and effectively reduce the inter-band tunneling hot electron effect.
1. A method of manufacturing a source-drain structure, the method comprising:
forming a plurality of gate electrodes on a substrate;
forming a drain region and a source region;
forming a lightly-doped ultra-shallow junction comprising a plurality of one-conductivity type impurity ions in the drain region;
forming spacers on opposite sides of the gate electrodes;
performing a first opposite-conductivity type deep ion implantation comprising a plurality of impurity ions onto the lightly-doped ultra-shallow junction to form a drain-substrate junction in the vicinity of a junction between a side portion and a bottom portion of the lightly-doped ultra-shallow junction and the substrate, the drain-substrate junction comprising the plurality of impurity ions opposite the plurality of one-conductivity type impurity ions of the lightly-doped ultra-shallow junction; and
performing a heavily-doped ion implantation onto the lightly-doped ultra-shallow junction to form a heavily-doped drain region.
2. The method of claim 1 , wherein spacers on adjacent gate electrodes in a source region disposed between the adjacent gate electrodes are in contact with each other.
3. The method of claim 1 , wherein the first opposite-conductivity type deep ion implantation is performed at an angle of an ion beam in relation to a surface of the substrate in a range between 45 degrees and 85 degrees, an energy in a range between 10 keV and 50 keV.
4. The method of claim 1 , wherein the first opposite-conductivity type deep ion implantation is performed with a dose smaller than a dose of the heavily-doped ion implantation.
5. The method of claim 4 , wherein the dose of the heavily-doped ion implantation is in a range between 2E11 cm −2 and 2E13 cm −2 .
6. The method of claim 1 , further comprising, prior to forming the lightly-doped ultra-shallow junction in the drain region:
performing a self-aligned ion implantation comprising a plurality of first-conductivity type ions onto a portion of the substrate to form a self-aligned source region;
performing a second deep opposite-conductivity type ion implantation comprising a plurality of second ions opposite the plurality of first-conductivity type ions onto the formed self-aligned source region to form a source-substrate junction in the vicinity of a junction between a side portion and bottom portion of the self-aligned source region and the substrate.
7. The method of claim 6 , wherein performing the second deep opposite-conductivity type ion implantation comprises using an implantation angle between 45 degrees and 80 degrees in relation to a surface of the substrate, and an energy greater than an energy of the self-aligned ion implantation.
8. The method of claim 1 , wherein the heavily-doped drain region divides the lightly-doped ultra-shallow junction into a first junction region and a second junction region, and the heavily-doped drain region has a width smaller than a width of the first junction region or a width of the second junction region.
9. The method of claim 1 , wherein the drain-substrate junction comprises an edge curvature smaller than an edge curvature of the lightly-doped ultra-shallow junction.