Semiconductor device

1. A semiconductor device comprising:

a first magnetic layer including a plurality of first regions configured as a plurality of memory cells and spaced apart from each other on a substrate, and a second region continuously encompassing the plurality of first regions and electrically isolated from the plurality of first regions;

a tunnel barrier layer on the first magnetic layer; and

a second magnetic layer on the tunnel barrier layer.

2. The semiconductor device of claim 1 , wherein the plurality of first regions are arranged in rows and columns, and the second region includes a single layer in the vicinity of the plurality of first regions.

3. The semiconductor device of claim 1 , wherein the second region is spaced apart from the plurality of first regions and includes substantially uniform gaps along circumferences of the plurality of first regions.

4. The semiconductor device of claim 1 , further comprising an isolation insulating layer between the first region and the second region.

5. The semiconductor device of claim 4 , wherein a width of the isolation insulating layer is narrower than a width of the first region.

6. The semiconductor device of claim 1 , further comprising a lower electrode below at least one of the plurality of first regions and electrically connected to at least one of the plurality of first regions.

7. The semiconductor device of claim 6 , wherein the lower electrode comprises a contact plug electrically connected to a selection device, and a lower electrode layer on the contact plug, the lower electrode layer being below the second region.

8. The semiconductor device of claim 7 , wherein a region of the lower electrode layer that is below the second region is substantially electrically isolated from the contact plug.

9. The semiconductor device of claim 4 , wherein the tunnel barrier layer covers the first magnetic layer and the isolation insulating layer.

10. The semiconductor device of claim 1 , wherein the second magnetic layer is a single layer covering the tunnel barrier layer.

11. The semiconductor device of claim 1 , wherein the second magnetic layer and the tunnel barrier layer have a pattern corresponding to a pattern of the first magnetic layer.

12. The semiconductor device of claim 1 , wherein the second region surrounds an entire side surface of the plurality of first regions.

13. A semiconductor device comprising:

a plurality of magnetic memory elements on a substrate, the magnetic memory elements being configured as a plurality of memory cells and including a first magnetic layer, a tunnel barrier layer contacting the first magnetic layer, and a second magnetic layer contacting the tunnel barrier layer; and

a plurality of selection devices on the substrate or within the substrate,

wherein the first magnetic layer includes a plurality of first regions electrically connected to the plurality of selection devices and spaced apart from each other, and a second region continuously encompassing the plurality of first regions and electrically isolated from the plurality of first regions.

14. The semiconductor device of claim 13 , further comprising bit lines electrically connected to the plurality of selection devices.

15. The semiconductor device of claim 13 , further comprising an isolation insulating layer between the plurality of first regions and the second region, wherein the second magnetic layer covers a top surface of the isolation insulating layer.

16. A semiconductor device comprising:

a first magnetic layer on a substrate, the first magnetic layer including a plurality of first regions and a second region continuously encompassing the plurality of first regions;

an insulating layer between the plurality of first regions and the second region; and

a second magnetic layer on the first magnetic layer; wherein

an upper surface of the plurality of first regions and an upper surface of the second region are co-planar; and

a degree of crystallinity of the second magnetic layer is increased due to the upper surface of the plurality of first regions and the upper surface of the second region being co-planar.

17. The semiconductor device of claim 16 , further comprising:

a tunnel barrier layer between the first magnetic layer and the second magnetic layer.

18. The semiconductor device of claim 16 , wherein the first region is at least one of spatially and electrically isolated from the plurality of first regions.

19. The semiconductor device of claim 16 , wherein the tunnel barrier layer is in contact with the first magnetic layer, and the second magnetic layer is in contact with the tunnel barrier layer.

20. The semiconductor device of claim 16 , wherein the second region surrounds an entire side surface of the plurality of first regions.