Method of enabling seamless cobalt gap-fill

1. A method for depositing a metal layer for forming a semiconductor device, comprising:

performing a barrier layer deposition process to deposit a barrier layer in a feature definition formed in a substrate, wherein the performing a barrier layer deposition process comprises depositing a TiN barrier layer or a titanium barrier layer;

performing a wetting layer deposition to deposit a wetting layer on the barrier layer;

performing a cyclic metal deposition process to deposit a cobalt metal layer on the wetting layer, comprising:

exposing the substrate to a deposition precursor gas mixture to deposit a portion of the cobalt metal layer in the feature definition;

exposing the portion of the cobalt metal layer to either a plasma treatment process or a hydrogen annealing process;

repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the cobalt metal layer to either a plasma treatment process or a hydrogen annealing process until a predetermined thickness of the cobalt metal layer is achieved; and

annealing the cobalt metal layer.

2. The method of claim 1 , wherein the hydrogen annealing process comprises supplying a gas mixture including at least one of an inert gas and hydrogen gas (H 2 ) while providing heat energy to the cobalt metal layer.

3. The method of claim 2 , wherein the hydrogen annealing process is a hydrogen purge process performed at a temperature from about 300 degrees Celsius and about 500 degrees Celsius, with a hydrogen pressure from about 5 Torr to about 60 Torr and at a hydrogen flow rate from about 1,000 sccm and about 30,000 sccm.

4. The method of claim 1 , wherein the exposing the substrate to a deposition precursor gas mixture to deposit a portion of the cobalt metal layer in the feature definition and the exposing the portion of the cobalt metal layer to either a plasma treatment process or a hydrogen annealing process are performed in-situ in the same processing chamber.

5. The method of claim 1 , wherein the wetting layer is deposited by a process selected from physical vapor deposition (PVD) cobalt, chemical vapor deposition (CVD) TiN, PVD TiN, CVD Ru, PVD Ru, nitridation of PVD Ti, or combinations thereof.

6. The method of claim 1 , wherein the feature definition is selected from vias, trenches, lines and contact holes.

7. The method of claim 5 , wherein the hydrogen annealing process comprises supplying a gas mixture including at least one of an inert gas and hydrogen gas (H 2 ) while providing heat energy to the cobalt metal layer.

8. The method of claim 7 , wherein the exposing the substrate to a deposition precursor gas mixture to deposit a portion of the cobalt metal layer in the feature definition and the exposing the portion of the cobalt metal layer to either a plasma treatment process or a hydrogen annealing process are performed in-situ in the same processing chamber.

9. The method of claim 7 , wherein the hydrogen annealing process is a hydrogen purge process performed at a temperature from about 300 degrees Celsius and about 500 degrees Celsius, with a hydrogen pressure from about 5 Torr to about 60 Torr and at a hydrogen flow rate from about 1,000 sccm and about 30,000 sccm.

10. The method of claim 1 , wherein the deposition precursor gas mixture includes a cobalt-containing precursor and a reducing gas.

11. The method of claim 1 , wherein the barrier layer is the TiN barrier layer and is deposited to a thickness of between about 2 Å to about 100 Å.

12. The method of claim 5 , wherein the wetting layer prevents inter-diffusion of the substrate and the contact metal layer and to increase adhesion of the metal layer to the substrate.

13. The method of claim 1 , wherein the cobalt metal layer fills the feature definition.