Flexible electronic device having adhesive function and method of manufacturing the same

1. A flexible electronic device having an adhesive function, comprising:

an adhesive tape including a flexible film and an adhesive layer formed on one side of the flexible film; and

an electronic device formed on a remaining side of the flexible film of the adhesive tape;

wherein the adhesive tape further includes a surface reforming layer disposed on the remaining side of the flexible film to planarize a surface of the remaining side; and

wherein the adhesive tape has a Young's modulus that is lower than a Young's modulus of the surface reforming layer.

2. The flexible electronic device of claim 1 , wherein the electronic device includes the flexible film as a substrate.

3. The flexible electronic device of claim 1 , wherein the surface reforming layer includes one or more selected from polyimide, polvacrylate, polyurethane, polyethylene, polyvinylphenol, and polyvinyl alcohol.

4. The flexible electronic device of claim 1 , wherein the surface reforming layer has a root-mean-square roughness of 0.1 to 1 nm.

5. The flexible electronic device of claim 1 , wherein the flexible electronic device is one or more selected from a field-effect transistor, a solar cell, an organic light emitting diode, a tactile sensor, a radio frequency identification tag, an electronic paper, and a bio sensor.

6. The flexible electronic device of claim 5 , wherein the flexible electronic device is the field-effect transistor, and

the field-effect transistor includes

the adhesive tape including the flexible film and the adhesive layer formed on one side of the flexible film;

a gate electrode positioned on a remaining side of the flexible film of the adhesive tape;

a gate insulating layer positioned on the gate electrode;

a source electrode and a drain electrode positioned on the gate insulating layer and disposed so as to be spaced apart from each other; and

an active layer positioned on the gate insulating layer to electrically connect the source electrode and the drain electrode.

7. The flexible electronic device of claim 6 , wherein the gate insulating layer has a thickness of 1 to 10 nm.

8. The flexible electronic device of claim 6 , wherein the active layer includes one or more selected from graphene, PQT-12 (poly(3,3′″-didodecyl quarterthiophene)), P3HT (poly(3-hexyl thiophene)), P3BT (poly(3-butyl thiophene)), P3OT (poly(3-octyl thiophene)), PPy (polypyrrole), PANI (polyaniline), PDPP (polydiketopyrrolopyrrole), PIID (polyisoindigo), PPDI (poly(perylene diimide)), PNDI (poly(naphthalene diimide)), PEO (poly(ethylene oxide)), PCL (poly(ε-caprolactone)), PMMA (poly(methyl methacrylate)), PS (polystyrene), PVP (poly(vinyl pyrrolidone)), pentacene, rubrene, copper phthalocyanine, and fullerene.

9. A method of manufacturing a flexible electronic device having an adhesive function, comprising:

(a) preparing an adhesive tape including a flexible film and an adhesive layer formed on one side of the flexible film;

(b) forming an electronic device on a remaining side of the flexible film of the adhesive tape; and

(c) applying a surface reforming layer on the remaining side of the flexible film of the adhesive tape after (a) the preparing the adhesive tape;

wherein the adhesive tape has a Young's modulus that is lower than a Young's modulus of the surface reforming layer.

10. The method of claim 9 , wherein the electronic device of (b) the forming the electronic device is one or more selected from a field-effect transistor, a solar cell, an organic light emitting diode, a tactile sensor, a radio frequency identification tag, an electronic paper, and a bio sensor.

11. The method of claim 10 , wherein the electronic device of (b) the forming the electronic device is the field-effect transistor, and (b) the forming the electronic device includes

(b-1) forming a gate electrode on a remaining side of a flexible film of an adhesive tape;

(b-2) forming a gate insulating layer on the gate electrode;

(b-3) forming a source electrode and a drain electrode on the gate insulating layer; and

(b-4) forming an active layer through which the source electrode and the drain electrode are electrically connected on the gate insulating layer.

12. The method of claim 11 , wherein the active layer is a graphene layer, and the graphene layer is any one selected from graphene manufactured using physical or chemical stripping, graphene grown in SiC to be manufactured, and graphene manufactured using a chemical vapor deposition process.

13. The method of claim 11 , wherein (b-4) the forming the active layer is performed using a dry transfer process.

14. The method of claim 11 , wherein (b-2) the forming the gate insulating layer is performed using any one process selected from UV ozone treatment, heat treatment in an oxygen atmosphere, and oxygen plasma treatment.

15. The method of claim 14 , wherein (b-2) the forming e gate insulating layer is performed using the oxygen plasma treatment.

16. The method of claim 15 , wherein the oxygen plasma treatment is performed under a condition of RF power of 10 to 300 W.

17. The method of claim 15 , wherein the oxygen plasma treatment is performed under a condition of pressure of 1 to 1000 mTorr.