High quality-factor fano metasurface comprising a single resonator unit cell
A new monolithic resonator metasurface design achieves ultra-high Q-factors while using only one resonator per unit cell. The metasurface relies on breaking the symmetry of otherwise highly symmetric resonators to induce intra-resonator mixing of bright and dark modes (rather than inter-resonator couplings), and is scalable from the near-infrared to radio frequencies and can be easily implemented in dielectric materials. The resulting high-quality-factor Fano metasurface can be used in many sensing, spectral filtering, and modulation applications.
1. Fano metasurface, comprising:
dielectric substrate comprising an intermediate layer on the substrate;
a periodic two-dimensional array of single-resonator unit cells on the intermediate layer, each resonator comprising at least one perturbation in a symmetric dielectric structure wherein the at least one perturbation has a different permittivity than that of the dielectric structure material and wherein the intermediate layer has a lower permittivity than the permittivity of the dielectric structure material,
wherein the resonator has an electric or magnetic dipole moment in the plane of the substrate that couples to normally incident light and at least one out-of-plane electric or magnetic dipole moment that couples in the near-field to the in-plane electric or magnetic dipole moment, whereby the out-of-plane electric or magnetic dipole moment provides a narrow spectral resonance within a broad spectral resonance provided by the in-plane electric or magnetic dipole moment.
2. The Fano metasurface of claim 1 , wherein the dielectric structure comprises Si and the intermediate layer comprises SiO 2 .
3. The Fano metasurface of claim 1 , wherein the dielectric structure comprises GaAs and the intermediate layer comprises AlGaO.
4. Fano metasurface, comprising:
a periodic two-dimensional array of single-resonator unit cells on a dielectric substrate, each resonator comprising at least one perturbation in a symmetric dielectric structure wherein the at least one perturbation has a different permittivity than that of the dielectric structure and wherein the symmetric dielectric structure comprises a sphere, a prism, a pyramid, a cube, or a cylinder,
wherein the resonator has an electric or magnetic dipole moment in the plane of the substrate that couples to normally incident light and at least one out-of-plane electric or magnetic dipole moment that couples in the near-field to the in-plane electric or magnetic dipole moment, whereby the out-of-plane electric or magnetic dipole moment provides a narrow spectral resonance within a broad spectral resonance provided by the in-plane electric or magnetic dipole moment.
5. The Fano metasurface of claim 4 , wherein the symmetric dielectric structure comprises a cube and wherein the perturbation comprises a notch.
6. The Fano metasurface of claim 4 , wherein the symmetric dielectric structure comprises a cube and wherein the perturbation comprises a tilted or stepped sidewall.
7. Fano metasurface, comprising:
a periodic two-dimensional array of single-resonator unit cells on a dielectric substrate, each resonator comprising at least one perturbation in a symmetric dielectric structure wherein the at least one perturbation is filled with a material having a different permittivity than the dielectric structure material,
wherein the resonator has an electric or magnetic dipole moment in the plane of the substrate that couples to normally incident light and at least one out-of-plane electric or magnetic dipole moment that couples in the near-field to the in-plane electric or magnetic dipole moment, whereby the out-of-plane electric or magnetic dipole moment provides a narrow spectral resonance within a broad spectral resonance provided by the in-plane electric or magnetic dipole moment.
8. The Fano metasurface of claim 1 , 4 , or 7 , wherein the dielectric structure comprises germanium, tellurium, silicon, or a IV-VI compound comprising lead.
9. The Fano metasurface of claim 1 , 4 , or 7 , wherein the dielectric structure comprises a III-V compound.
10. The Fano metasurface of claim 9 , wherein the III-V compound comprises gallium arsenide or gallium nitride.
11. The Fano metasurface of claim 4 or 7 , wherein the dielectric substrate comprises a material having a lower permittivity than the permittivity of the dielectric structure material.
12. The Fano metasurface of claim 11 , wherein the dielectric structure comprises Ge and dielectric substrate comprises BaF 2 .
13. The Fano metasurface of claim 1 , 4 , or 7 , wherein the incident light has a wavelength between 0.75 μm and 1 m.
14. The Fano metasurface of claim 1 , 4 , or 7 , wherein the narrow spectral resonance has a Q-factor of greater than 100.
15. The Fano metasurface of claim 1 , 4 , or 7 , wherein the size of the unit cell is smaller than the wavelength of the incident light.
16. The Fano metasurface of claim 1 , 4 , or 7 , wherein the size of the periodic two-dimensional array is greater than a 5×5 array.