Semiconductor light-emitting device and method for manufacturing the same
A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.
1. A semiconductor light-emitting device comprising:
a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by recombination of electrons and holes;
a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an exposed surface of the first semiconductor layer with a surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer;
a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer;
a non-conductive reflective film formed over the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer;
a first electrode which provides one of electrons and holes to the plurality of semiconductor layers and is electrically connected to the exposed surface of the first semiconductor layer; and
a second electrode disposed on the non-conductive reflective film, which provides the other of electrons and holes to the plurality of semiconductor layers and is electrically connected to the second semiconductor layer,
wherein the light is reflected from the active layer towards the first semiconductor layer by the non-conductive reflective film formed over the second semiconductor layer.
2. The semiconductor light-emitting device according to claim 1 , wherein the non-conductive reflective film is extended over the first inclined face and the exposed, first semiconductor layer surface.
3. The semiconductor light-emitting device according to claim 1 , wherein the non-conductive reflective film comprises a DBR (Distributed Bragg Reflector).
4. The semiconductor light-emitting device according to claim 3 , wherein the non-conductive reflective film comprises a dielectric film disposed below the DBR.
5. The semiconductor light-emitting device according to claim 1 , wherein the non-conductive reflective film is formed on the second semiconductor layer only.
6. The semiconductor light-emitting device according to claim 1 , wherein the non-conductive reflective film comprises a dielectric film.
7. The semiconductor light-emitting device according to claim 1 , comprising an electrical connection that passes through the non-conductive reflective film and connects the second electrode to the second semiconductor layer.
8. The semiconductor light-emitting device according to claim 7 , comprising a finger electrode that is interposed between the non-conductive reflective film and the second semiconductor layer and connected to the second electrode by an electrical connection.
9. The semiconductor light-emitting device according to claim 1 , wherein the non-conductive reflective film has an inclined face on an edge of the non-conductive reflective film.