IP Library Granted Patent US 9,695,052
Granted Patent B2
US 9,695,052 · App. 14/321,700 · Granted Jul 4, 2017

Recovery of hydrohalosilanes from reaction residues

Inventors: Pei Yoong Koh (Moses Lake, WA); Anthony D. Thompson (Moses Lake, WA)
Assignee: REC Silicon Inc
C01B33/10778
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Quick Facts
Patent No.
US 9,695,052
App. No.
14/321,700
Granted
Jul 4, 2017
Kind
B2
Abstract

Methods of recovering hydrohalosilanes from reaction residues are disclosed. An inorganic halosilane slurry comprising (i) tetrahalosilane, trihalosilane, dihalosilane, or any combination thereof, (ii) silicon particles, and (iii) heavies is passed through a thin-film dryer to remove halosilanes and form a solid residue comprising silicon particles. Heavies also may be removed as the slurry passes through the thin-film dryer.

Claims (34)

1. A process for recovering inorganic halosilanes from reaction residues, comprising:

flowing an inorganic halosilane slurry comprising (i) volatile halosilanes, (ii) silicon particles, and (iii) heavies through a vaporization zone of a thin-film dryer to vaporize the volatile halosilanes, the vaporization zone having an internal pressure at or above atmospheric pressure and an internal temperature T 1 greater than an upper end of a boiling point range of the volatile halosilanes at the internal pressure of the vaporization zone;

recovering vaporized volatile halosilanes from the vaporization zone; and

recovering a solid residue comprising the silicon particles from an outlet of the thin-film dryer.

2. The process of claim 1 wherein the slurry initially comprises more than 50 wt % volatile halosilanes.

3. The process of claim 1 , wherein the heavies comprise metal halides, polyhalosilanes, polyhalooxysilanes, and combinations thereof.

4. The process of claim 1 wherein the slurry initially comprises up to 50 wt % heavies.

5. The process of claim 1 wherein the solid residue has a dryness of at least 70%.

6. The process of claim 1 , further comprising flowing the inorganic halosilane slurry at a rate to maintain a slurry mass flux from 0.001 kg s −1 m −2 to 0.1 kg s −1 m −2 .

7. The process of claim 1 , further comprising maintaining the internal pressure in the range of 101-170 kPa.

8. The process of claim 1 wherein:

the thin-film dryer comprises a rotor within the vaporization zone, the rotor having a plurality of blades extending toward an internal wall surface of the thin-film dryer; and

the process further comprises rotating the rotor to form a slurry film having an average thickness≦2 mm on the internal wall surface.

9. The process of claim 1 , further comprising treating the solid residue to produce a solid material that is non-reactive when exposed to ambient atmosphere.

10. The process of claim 9 wherein the treating the solid residue comprises contacting the solid residue with an alkaline hydrate.

11. The process of claim 1 wherein the vaporized volatile halosilanes recovered from the vaporization zone further comprise entrained fines, the process further comprising separating the entrained fines from the volatile halosilanes.

12. The process of claim 1 wherein:

the temperature T 1 is less than an upper end of a boiling point or sublimation point range of the heavies at the internal pressure; and

the solid residue further comprises at least a portion of the heavies.

13. The process of claim 12 wherein vapor recovered from the vaporization zone is substantially devoid of heavies.

14. The process of claim 1 wherein:

the inorganic halosilane slurry is an inorganic chlorosilane slurry comprising (i) silicon tetrachloride, trichlorosilane, dichlorosilane, or any combination thereof, (ii) silicon particles, and (iii) heavies; and

the temperature T 1 is from 80° C. to 200° C.

15. The process of claim 14 , further comprising maintaining the temperature T 1 at 80° C. to 115° C.

16. The process of claim 15 wherein the solid residue further comprises at least a portion of the heavies.

17. The process of claim 1 wherein the thin-film dryer contains a second vaporization zone positioned between the vaporization zone and the outlet, the process further comprising:

maintaining an internal temperature T 2 in the second vaporization zone, where T 2 >T 1 ; and

flowing the slurry sequentially through the first vaporization zone and the second vaporization zone.

18. The process of claim 17 , further comprising:

maintaining the temperature T 2 at a temperature greater than a boiling point or sublimation point of at least one species of the heavies at the internal pressure, the at least one species of the heavies comprising at least one polyhalosilane or polyhalooxysilane;

vaporizing at least a portion of the heavies in the second vaporization zone to produce a heavies vapor; and

recovering the heavies vapor.

19. The process of claim 18 wherein the solid residue has a dryness of at least 70%.

20. The process of claim 17 wherein the inorganic halosilane slurry is an inorganic chlorosilane slurry, the process further comprising maintaining the temperature T 1 at 80° C. to 115° C. and the temperature T 2 at a temperature from greater than 115° C. to 200° C.

Assignments (2)
SECURITY INTEREST Recorded Jan 24, 2025
From: REC SILICON INC; REC ADVANCED SILICON MATERIALS LLC
To: HANWHA INTERNATIONAL LLC, AS LENDER
Reel/Frame 070002/0600 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2014
From: KOH, PEI YOONG; THOMPSON, ANTHONY D.
To: REC SILICON INC
Reel/Frame 033378/0139 →
Continuity (1)
Related Publication 20160002053A1 · Jan 7, 2016