IP Library › Granted Patent US 9,704,557
Granted Patent B2
US 9,704,557 · App. 14/220,862 · Granted Jul 11, 2017

Method and apparatus for storing retention time profile information based on retention time and temperature

Inventors: Xiangyu Dong (San Diego, CA); Jung Pill Kim (San Diego, CA); Deepti Vijayalakshmi Sriramagiri (San Diego, CA); Jungwon Suh (San Diego, CA)
Assignee: QUALCOMM Incorporated
G11C11/40626G06F13/1668G11C7/04G11C11/406G11C11/40611G11C2211/4068Y02B60/1228
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Quick Facts
Patent No.
US 9,704,557
App. No.
14/220,862
Granted
Jul 11, 2017
Kind
B2
Abstract

Memory devices may send information related to refresh rates to a memory controller. The memory controller may instruct the memory devices to refresh based on the received information.

Claims (11)

1. An apparatus comprising:

a first memory device configured to store first a retention time profile information, the first retention time profile information comprising data that indicates a first retention time of first memory cells within the first memory device at a first temperature and a second retention time of the first memory cells at a second temperature, wherein the first retention time is distinct from the second retention time, wherein the first retention time is associated with operation of the first memory cells at the first temperature, the first temperature distinct from the second temperature, wherein the second retention time is associated with operation of the first memory cells at the second temperature, and wherein the first retention time profile information is accessible to a memory controller via a data bus; and

a second memory device configured to store a second retention time profile information, wherein the second retention time profile information comprises second data that indicates a third retention time of second memory cells within the second memory device, wherein the third retention time is associated with operation of the second memory cells at the first temperature, wherein the third retention time is distinct from the first retention time, wherein the first memory device and the second memory device are configured to receive refresh commands from the memory controller, and wherein a rate of the refresh commands is based on a lower of the first retention time and the third retention time.

2. The apparatus of claim 1 , wherein each of the first memory device and the second memory device comprises a dynamic random access memory (DRAM) device.

3. The apparatus of claim 1 , wherein the first memory device includes a first mode register configured to store the first retention time profile information, and wherein the second memory device includes a second mode register configured to store the second retention time profile information.

4. The apparatus of claim 3 , wherein the first memory device includes:

a first temperature sensor configured to determine the first temperature of the first memory device; and

a third mode register configured to store temperature data indicative of the first temperature.

5. The apparatus of claim 4 , wherein the second memory device includes:

a second temperature sensor configured to determine the second temperature of the second memory device; and

a fourth mode register configured to store second temperature data indicative of the second temperature.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2014
From: DONG, XIANGYU; KIM, JUNG PILL; SRIRAMAGIRI, DEEPTI VIJAYALAKSHMI; SUH, JUNGWON
To: QUALCOMM INCORPORATED
Reel/Frame 032630/0540 →
Continuity (2)
Provisional Application 61882490 · Sep 25, 2013
Related Publication 20150085594A1 · Mar 26, 2015