Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
The present invention increases controllability of a composition ratio of a multi-element film that contains a predetermined element and at least one element selected from the group consisting of boron, oxygen, carbon and nitrogen. There is provided a method of manufacturing a semiconductor device, including: forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming the first film being free of borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and (b) forming the second film having a borazine ring structure and including at least boron and nitrogen.
1. A method of manufacturing a semiconductor device, comprising: forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
(a) forming the first film being free of a borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and
(b) forming the second film having the borazine ring structure and including at least boron and nitrogen.
2. The method of claim 1 , wherein (a) comprises: performing a first set a predetermined number of times, the first set comprising: (a-1) supplying a source gas including the predetermined element to the substrate; and (a-2) supplying at least one gas selected from the group consisting of a carbon-containing gas, a nitrogen-containing gas and an oxygen-containing gas to the substrate, and
(b) comprises: performing a second set a predetermined number of times, the second set comprising: (b-1) supplying a borazine-based gas to the substrate; and (b-2) supplying at least one gas selected from the group consisting of the source gas and the nitrogen-containing gas to the substrate.
3. The method of claim 2 , wherein each of the first set and the second set is performed one to fifty times.
4. The method of claim 1 , wherein the second film further comprises at least one element selected from the group consisting of the predetermined element and carbon.
5. The method of claim 1 , wherein the first film is free of boron.
6. The method of claim 1 , wherein the first film comprises at least one film selected from the group consisting of a film containing the predetermined element and oxygen, a film containing the predetermined element and nitrogen, a film containing the predetermined element and carbon, a film containing the predetermined element, oxygen and nitrogen, a film containing the predetermined element, carbon and nitrogen, a film containing the predetermined element, oxygen, carbon and nitrogen, and a film containing the predetermined element, oxygen and carbon.
7. The method of claim 1 , wherein the first film comprises at least one film selected from the group consisting of an oxide film, a nitride film, a carbide film, an oxynitride film, a carbonitride film, an oxycarbonitride film and an oxycarbide film.
8. The method of claim 1 , wherein the second film comprises at least one film selected from the group consisting of a boron nitride film and a boron carbonitride film.
9. The method of claim 1 , wherein a thickness of each of the first film and the second film ranges from 0.1 nm through 5 nm.
10. The method of claim 1 , wherein the laminated film comprises a nano-laminated film where the first film and the second film are alternately laminated at a nano level.
11. The method of claim 1 , wherein (a) is performed first when the cycle is performed the predetermined number of times.
12. The method of claim 1 , wherein (a) is performed last when the cycle is performed the predetermined number of times.
13. A non-transitory computer-readable recording medium storing a program for causing a computer to perform a cycle a predetermined number of times to form a laminated film where a first film and a second film are laminated on a substrate, the cycle including:
(a) forming the first film being free of a borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and
(b) forming the second film having the borazine ring structure and including at least boron and nitrogen.