Piezoelectric thin film resonator and method of fabricating the same

1. A piezoelectric thin film resonator comprising:

a substrate;

a piezoelectric film that is located on the substrate;

a lower electrode and an upper electrode that face each other across at least a part of the piezoelectric film;

an insertion film that is inserted into the piezoelectric film, is located in at least a part of an outer peripheral region in a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film and outside the outer peripheral region, and is not located in a center region of the resonance region;

a protective film that is formed on the upper electrode and the piezoelectric film; and

a wiring line that connects to the lower electrode in an extraction region of the lower electrode,

wherein in the extraction region of the lower electrode, an outer periphery of the insertion film is located further out than an outer periphery of the upper electrode and is located further in than an outer periphery of the piezoelectric film, an outer periphery of the protective film is located further out than the outer periphery of the insertion film, and the wiring line covers the outer periphery of the protective film.

2. The piezoelectric thin film resonator according to claim 1 , wherein

in the extraction region of the lower electrode, an inner periphery of the wiring line is located further out than the outer periphery of the upper electrode.

3. The piezoelectric thin film resonator according to claim 1 , wherein

an air gap is located below the lower electrode, and

in the extraction region of the lower electrode, the outer periphery of the piezoelectric film is located further in than an outer periphery of the air gap.

4. The piezoelectric thin film resonator according to claim 1 , wherein

in the extraction region of the lower electrode, an inner periphery of the wiring line is located further in than the outer periphery of the insertion film.

5. The piezoelectric thin film resonator according to claim 1 , further comprising:

another wiring line connecting to the upper electrode in an extraction region of the upper electrode,

wherein in the extraction region of the upper electrode, the another wiring line covers the outer periphery of the protective film.

6. The piezoelectric thin film resonator according to claim 1 , wherein

Young's modulus of the insertion film is less than Young's modulus of the piezoelectric film.

7. A method of fabricating a piezoelectric thin film resonator comprising:

forming, on a substrate, a piezoelectric film, a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film, and an insertion film inserted into the piezoelectric film, located in at least a part of an outer peripheral region in a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, located outside the outer peripheral region, and not located in a center region of the resonance region so that in an extraction region of the lower electrode, an outer periphery of the insertion film is located further out than an outer periphery of the upper electrode and is located further in than an outer periphery of the piezoelectric film;

forming a protective film on the upper electrode and the piezoelectric film;

etching a part of the protective film so that in the extraction region of the lower electrode, an outer periphery of the protective film is located further out than the outer periphery of the insertion film; and

forming a wiring line connecting to the lower electrode in the extraction region of the lower electrode so that the wiring line covers the outer periphery of the protective film in the extraction region of the lower electrode.

8. The method according to claim 7 , further comprising:

forming a sacrifice layer on the substrate; and

forming an air gap between the substrate and the lower electrode by etching the sacrifice layer after the forming of the wiring line.