Laminate having porous organic semicoductor thin film and chemical sensor comprising same
Disclosed herein is a laminate comprising: a substrate; an organic surface modifying layer disposed on the substrate; and a porous organic semiconductor layer disposed on the surface modifying layer. Onto the substrate, introduction of the organic surface modifying layer having a low surface energy, and optionally the organic intermediate layer having a low glass transition temperature controls the self assembly of the organic semiconductor layer, allowing the porous organic semiconductor layer to have high crystallinity and large crystal grains. Also, provided is a highly efficient chemical sensor comprising the laminate.
1. A laminate, comprising:
a substrate;
an organic surface modifying layer disposed on the substrate;
a porous organic semiconductor layer disposed on the surface modifying layer; and
an organic intermediate layer disposed between the organic surface modifying layer and the porous organic semiconductor layer;
wherein the organic surface modifying layer is a self-assembled monolayer (SAM).
2. The laminate of claim 1 , wherein the organic surface modifying layer has a surface energy of 10 to 60 mJ m −2 .
3. The laminate of claim 1 , wherein the porous organic semiconductor layer ranges in pore size from 1 to 2000 nm.
4. The laminate of claim 1 , wherein the organic surface modifying layer contains any one of the compounds represented by the following Chemical Formulas 1 and 2:
wherein,
R1 is a C3 to C30 alkyl,
X1 is a C1 to C6 alkoxy, F, Cl, Br, or I,
X2 is H, a C1 to C6 alkoxy, F, Cl, Br, or I, and
X3 is H, a C1 to C6 alkoxy, F, Cl, Br, or I; and
wherein,
R2 is a C3 to C30 alkyl,
X4 is H, OH, or a C1 to C6 alkoxy, and
X5 is H, OH, or a C1 to C6 alkoxy.
5. The laminate of claim 4 , wherein the organic surface modifying layer contains a compound selected from the group consisting of n-octadecyltrimethoxysilane, n-octadecyltrichlorosilane, n-octyltrichlorosilane, n-octylphosphate, and n-octadecylphosphate.
6. The laminate of claim 1 , wherein the organic intermediate layer contains a low-molecular weight material having a glass transition temperature (T g ).
7. The laminate of claim 6 , wherein the glass transition temperature ranges from 0 to 300° C.
8. The laminate of claim 6 , wherein the low-molecular weight material is any one of compounds represented by the Chemical Formula 3 or 4:
wherein,
Ar 1 is a C6 to C22 polycyclic aromatic hydrocarbon radical, or
wherein n is an integer of 1 to 5,
R′ is H,
R3 to R5, which may be the same or different, are independently H or a C1 to C6 alkyl,
R6 to R8, which may be the same or different, are independently H or a C1 to C6 alkyl;
wherein,
R 9 to R 12 , which may be the same or different, are independently a hydrogen atom or a C1 to C6 alkyl.
9. The laminate of claim 8 , wherein Ar 1 of Chemical Formula 3 is selected from the group consisting of phenylene, naphthalenylene, anthracenylene, pyrenylenylene, tetracenylene, and pentacenylene.
10. The laminate of claim 6 , wherein the low-molecular weight material is selected from the group consisting of m-bis(triphenylsilyl)benzene, o-bis(triphenylsilyl)benzene), and p-bis(triphenylsilyl)benzene.
11. The laminate of claim 1 , wherein the organic semiconductor layer contains at least one selected from the group consisting of oligo-thiophene, polycyclic aromatic hydrocarbon compounds, polycyclic heteroaromatic hydrocarbon compounds, and derivatives thereof.
12. The laminate of claim 1 , wherein the organic semiconductor layer contains at least one selected from among anthracene, tetracene, pentacene, hexacene, quinolone, naphthylridine, quinazoline, antradithophene, fullerene, perylenedicarboximide, naphtalene diimide, oligo-thiophene, 6,13-bis(triisopropylsilylethynyl)pentacene, 5,11-bis(triethylsilylethynyl)anthradithiophene, 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, C60 [6,6]-phenyl-C61-butyric acid methyl ester (C60 PCBM), Cu-phthalocyanine), and Zn-phthalocyanine.
13. An electronic device, comprising the laminate of claim 1 .