IP Library › Granted Patent US 9,722,641
Granted Patent B2
US 9,722,641 · App. 15/017,608 · Granted Aug 1, 2017

Semiconductor device and radio communication device

Inventor: Noriaki Matsuno (Tokyo, JP)
Assignee: Renesas Electronics Corporation
H04B1/0458H04B1/0475
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Quick Facts
Patent No.
US 9,722,641
App. No.
15/017,608
Granted
Aug 1, 2017
Kind
B2
Abstract

A semiconductor device ( 10 ) includes a transmitting circuit ( 12 ) that converts transmission data into a transmission signal with a specified frequency, an amplifier ( 13 ) that amplifies a power of the transmission signal, a matching circuit ( 14 ) that converts the transmission signal from a balanced signal to an unbalanced signal, and a filter circuit ( 14 ) that restricts a frequency band of the transmission signal. The matching circuit includes a primary inductor and a secondary indictor, the filter circuit includes an inductor for a filter, and the primary inductor, the secondary indictor and the inductor for a filter are wound substantially concentrically on one plane.

Claims (29)

1. A semiconductor device comprising:

a transmitting circuit that converts transmission data into a transmission signal with a specified frequency;

an amplifier that amplifies a power of the transmission signal;

a matching circuit that converts the transmission signal from a balanced signal to an unbalanced signal; and

a filter circuit that restricts a frequency band of the transmission signal, wherein

the matching circuit includes a primary inductor and a secondary inductor,

the filter circuit includes an inductor, and

the primary inductor, the secondary inductor and the inductor for the filter are wound substantially concentrically on one plane.

2. The semiconductor device according to claim 1 , wherein a coupling constant between the inductor for the filter and the primary inductor is smaller than a coupling constant between the primary inductor and the secondary inductor, and a coupling constant between the inductor for the filter and the secondary inductor is smaller than a coupling constant between the primary inductor and the secondary inductor.

3. The semiconductor device according to claim 1 , wherein

the primary inductor is an inductor on a balanced side, and the secondary inductor is an inductor on an unbalanced side,

one end of the inductor on the unbalanced side is grounded, and

the matching circuit performs balanced-to-unbalanced conversion.

4. The semiconductor device according to claim 1 , wherein the inductor for the filter and the secondary inductor are wound in the same circumferential direction from a connection point between the inductor for the filter and the secondary inductor on the plane.

5. The semiconductor device according to claim 1 , wherein the inductor for the filter is placed outside the matching circuit.

6. The semiconductor device according to claim 1 , wherein the inductor for the filter is placed inside the matching circuit.

7. The semiconductor device according to claim 1 , wherein the inductor for the filter is placed between the primary inductor and the secondary inductor.

8. The semiconductor device according to claim 1 , wherein the inductor for the filter is placed inside and outside the matching circuit.

9. The semiconductor device according to claim 1 , wherein one terminal of the secondary inductor and one terminal of the inductor for the filter are connected, and the secondary inductor and the inductor for the filter have a common terminal.

10. The semiconductor device according to claim 1 , wherein the inductor for the filter is made up of two divided inductors, and each of the divided inductors connects a terminal of the secondary inductor and a terminal of the inductor for the filter.

11. The semiconductor device according to claim 1 , wherein the inductor for the filter includes an inductor placed outside the matching circuit and an inductor placed inside the matching circuit separately from each other.

12. The semiconductor device according to claim 1 , further comprising:

a capacitor that is connected to one end of the secondary inductor and one end of the inductor for the filter.

13. The semiconductor device according to claim 1 , wherein

the amplifier amplifies an alternating signal, and

an output terminal of the amplifier and the primary inductor are connected.

14. The semiconductor device according to claim 1 , wherein

the amplifier amplifies a signal with a radio frequency, and

the matching circuit connects the primary inductor to the amplifier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 6, 2016
From: MATSUNO, NORIAKI
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 037680/0451 →
Priority Claims (1)
JP 2015-033681 · Feb 24, 2015 · national
Continuity (1)
Related Publication 20160248453A1 · Aug 25, 2016