Variable capacitance capacitor element
A variable capacitance capacitor element according to an embodiment of the present invention comprises: a supporting substrate; a first electrode layer provided on the supporting substrate; a second electrode layer provided opposite to the first electrode layer; and a dielectric layer positioned between the first electrode layer and the second electrode layer. In accordance with an aspect, a main component of the dielectric layer is represented by a composition formula Ba 1−x Sr x TiO 3 (0.5≦x≦0.8), and the first thin film dielectric layer has a thickness of 200 nm or smaller.
1. A variable capacitance capacitor element comprising:
a supporting substrate;
a first electrode layer provided on the supporting substrate;
a second electrode layer provided opposite to the first electrode layer; and
a first thin film dielectric layer positioned between the first and second electrode layers,
wherein a main component of the first thin film dielectric layer is represented by a composition formula Ba 1−x Sr x TiO 3 (0.6<x≦0.8),
wherein the first thin film dielectric layer has a thickness from 30 nm to 150 nm, and
wherein the thickness of the first thin film dielectric layer is between 30 nm and 150 nm such that, upon application of a DC bias voltage of 3 Volts, an electric field strength in the variable capacitance capacitor element is 1.0 MV/cm or lower, and
wherein, when the DC bias voltage is continuously applied to the variable capacitance capacitor element for a predetermined amount of time, a variation rate of capacitance of the variable capacitance capacitor element is 4% or lower due to the thickness of the first thin film dielectric layer being between 30 nm and 150 nm and the composition formula of the first thin film dielectric layer being represented by Ba 1−x Sr x TiO 3 (0.6<x≦0.8).
2. The variable capacitance capacitor element of claim 1 , wherein the first thin film dielectric layer comprises one or more of Mn and Nb as additives.
3. The variable capacitance capacitor element of claim 1 further comprising:
a third electrode layer provided opposite to the first electrode layer; and
a second thin film dielectric layer positioned between the first and the third electrode layers,
wherein a main component of the second thin film dielectric layer is represented by a composition formula Ba 1−x Sr x TiO 3 (0.6<x≦0.8) and
wherein the second thin film dielectric layer has a thickness of from 30 nm to 150 nm.
4. A resonance circuit comprising:
an antenna circuit including an antenna coil; and
the variable capacitance capacitor element of claim 1 electrically connected to the antenna circuit.
5. A variable capacitance capacitor element comprising:
a supporting substrate;
a first electrode layer provided on the supporting substrate;
a second electrode layer provided opposite to the first electrode layer; and
a first thin film dielectric layer positioned between the first and second electrode layers,
wherein a main component of the first thin film dielectric layer is represented by a composition formula Ba 1−x Sr x TiO 3 (0.6<x≦0.8),
wherein the first thin film dielectric layer has a thickness from 30 nm to 150 nm, and
wherein a value of x in the composition formula Ba 1−x Sr x TiO 3 (0.6<x≦0.8) of the main component of the first thin film dielectric layer and the thickness of the first thin film dielectric layer are each selected such that, upon application of a DC bias voltage of 3 Volts, an electric field strength in the variable capacitance capacitor element is 1.0 MV/cm or lower and that, when the DC bias voltage is continuously applied to the variable capacitance capacitor element for a predetermined amount of time, a variation rate of capacitance of the variable capacitance capacitor element is 4% or lower.