Semiconductor device, inverter circuit, and vehicle
A semiconductor device according to embodiments described herein includes a p-type SiC layer, a gate electrode, and a gate insulating layer between the SiC layer and the gate electrode. The gate insulating layer includes a first layer, a second layer, a first region, and a second region. The second layer is between the first layer and the gate electrode and has a higher oxygen density than the first layer. The first region is provided across the first layer and the second layer, includes a first element from F, D, and H, and has a first concentration peak of the first element. The second region is provided in the first layer, includes a second element from Ge, B, Al, Ga, In, Be, Mg, Ca, Sr, Ba, Sc, Y, La, and lanthanoid, and has a second concentration peak of the second element and a third concentration peak of C.
1. A semiconductor device, comprising:
a p-type SiC layer;
a gate electrode; and
a gate insulating layer provided between the SiC layer and the gate electrode, the gate insulating layer including:
a first layer,
a second layer provided between the first layer and the gate electrode, the second layer having a higher oxygen density than the first layer,
a first region provided across the first layer and the second layer, the first region including a first element which is at least one element in the group of F (fluorine), D (deuterium), and H (hydrogen) and the first region having a first concentration peak of the first element, and
a second region provided in the first layer, the second region including a second element which is at least one element in the group of Ge (germanium), B (boron), Al (aluminum), Ga (gallium), In (indium), Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lantern), and lanthanoid (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) and the second region having a second concentration peak of the second element and a third concentration peak of C (carbon), a distance between the second concentration peak and the third concentration peak being shorter than a distance between the first concentration peak and the third concentration peak.
2. The semiconductor device according to claim 1 , wherein a distance between the second concentration peak and the first concentration peak is equal to or less than 4 nm, and the distance between the first concentration peak and the third concentration peak is equal to or less than 4 nm.
3. The semiconductor device according to claim 1 , wherein full widths at half maximum of the first concentration peak and the second concentration peak are equal to or less than 1 nm.
4. The semiconductor device according to claim 1 , wherein a full width at half maximum of the third concentration peak is equal to or less than 1 nm.
5. The semiconductor device according to claim 1 , wherein the first layer is a silicone oxide film.
6. The semiconductor device according to claim 1 , wherein the second layer is a hafnium oxide film or a zirconium oxide film.
7. An inverter circuit, comprising the semiconductor device according to claim 1 .
8. A vehicle comprising the semiconductor device according to claim 1 .