Photoresist composition and method for producing photoresist pattern
A photoresist composition comprising: a resin (A1) which has an acid-labile group; a resin (A2) which comprises a structural unit represented by formula (I); wherein R 1 represents a C1-C13 fluorinated saturated hydrocarbon group, A 1 represents a single bond, a C1-C6 alkanediyl group, or *-A 2 -X 1 -(A 3 -X 2 ) a -(A 4 ) b -, and R 2 represents a C1-C18 hydrocarbon group; and an acid generator.
1. A photoresist composition comprising:
a resin (A1) which has an acid-labile group;
a resin (A2) which consists of a structural unit represented by formula (I):
wherein R 1 represents a C1-C13 fluorinated saturated hydrocarbon group,
A 1 represents a single bond, a C1-C6 alkanediyl group, or *-A 2 -X 1 -(A 3 -X 2 ) a -(A 4 ) b -, where * represents a binding site to an oxygen atom, A 2 , A 3 and A 4 each independently represent a C 1 to C 6 alkanediyl group, X 1 and X 2 each independently represent —O—, —CO—O— or —O—CO—, a represents 0 or 1 and b represents 0 or 1, and
R 2 represents a C1-C18 hydrocarbon group; and
an acid generator.
2. The photoresist composition according to claim 1 , further comprising a salt which generates an acid weaker in acidity than an acid generated from the acid generator.
3. A process for producing a photoresist pattern comprising the following steps (1) to (5):
(1) a step of applying the photoresist composition according to claim 1 on a substrate,
(2) a step of forming a composition film by drying the composition,
(3) a step of exposing the composition film to radiation,
(4) a step of baking the exposed composition film, and
(5) a step of developing the baked composition film, thereby forming the photoresist pattern.