Mode control in vertical-cavity surface-emitting lasers
Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.
1. A vertical-cavity surface-emitting laser device, comprising:
a first distributed Bragg reflector;
a second distributed Bragg reflector;
an active region with an oxide aperture between the first and second distributed Bragg reflectors; and
a dielectric layer positioned above the second distributed Bragg reflector, wherein a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device.
2. The vertical-cavity surface-emitting laser device of claim 1 , wherein the dielectric layer has an opening therethrough.
3. The vertical-cavity surface-emitting laser device of claim 2 , wherein the opening of the dielectric layer is at a center of the dielectric layer.
4. The vertical-cavity surface-emitting laser device of claim 1 , wherein the dielectric layer comprises amorphous silicon.
5. The vertical-cavity surface-emitting laser device of claim 1 , wherein a p-contact layer is disposed between the dielectric layer and the second distributed Bragg reflector.
6. The vertical-cavity surface-emitting laser device of claim 1 , wherein a distal portion of the second distributed Bragg reflector includes a zinc diffusion region, the distal portion being on an end of the second distributed Bragg reflector that is opposite to the active region.
7. The vertical-cavity surface-emitting laser device of claim 1 , wherein the dielectric layer is concentrically aligned with the oxide aperture.
8. The vertical-cavity surface-emitting laser device of claim 7 , wherein the dielectric layer does not have an opening therethrough.
9. The vertical-cavity surface-emitting laser device of claim 8 , wherein the dielectric layer has multiple layers of different dielectric material, wherein a first diameter of the dielectric layer is larger than a second diameter of the oxide aperture.
10. The vertical-cavity surface-emitting laser device of claim 1 , wherein a distal portion of the second distributed Bragg reflector includes a zinc diffusion region formed in a ring that is concentrically aligned with the oxide aperture, the distal portion being on an end of the second distributed Bragg reflector that is opposite to the active region.
11. A method of forming a vertical-cavity surface-emitting laser device, the method comprising:
forming a first distributed Bragg reflector on a substrate, the first distributed Bragg reflector being an n-type distributed Bragg reflector;
forming an active region on the first distributed Bragg reflector, the active region having an oxide aperture;
forming a second distributed Bragg reflector on the active region, the second distributed Bragg reflector being a p-type distributed Bragg reflector;
forming a dielectric layer on the second distributed Bragg reflector, wherein a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device.
12. The method of claim 11 , wherein the dielectric layer has an opening therethrough.
13. The method of claim 12 , wherein the opening of the dielectric layer is at a center of the dielectric layer.
14. The method of claim 11 , wherein the dielectric layer comprises amorphous silicon.
15. A vertical-cavity surface-emitting laser device, comprising:
a first distributed Bragg reflector;
a second distributed Bragg reflector;
an active region with an oxide aperture between the first and second distributed Bragg reflectors; and
a dielectric layer positioned above the second distributed Bragg reflector, wherein the dielectric layer has an opening therethrough, wherein a positioning of the dielectric layer and the opening with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of at least a first mode of the vertical-cavity surface-emitting laser device.
16. The vertical-cavity surface-emitting laser device of claim 15 , wherein the dielectric layer comprises amorphous silicon, and wherein the opening of the dielectric layer is at a center of the dielectric layer.
17. The vertical-cavity surface-emitting laser device of claim 15 , wherein the opening of the dielectric layer is concentrically aligned with the oxide aperture.