Fast process flow, on-wafer interconnection and singulation for MEPV
A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.
1. An apparatus comprising:
a substrate having defined thereon a device layer on which a plurality of device cells are formed;
a first dielectric layer disposed directly on the device layer so as to overlie and encase the device cells;
a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells and lies across a boundary between at least two of the electrically connected device cells; and
a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.
2. The apparatus of claim 1 , wherein the dielectric comprises at least one opening in the area between the plurality of device cells and the at least one opening comprises rounded edges.
3. The apparatus of claim 1 , wherein the dielectric material comprises a tether on the plurality of interconnects and is otherwise absent from the area between the plurality of circuit cells.