Method for reduced source and drain contact to gate stack capacitance

1. A method for fabricating a semiconductor device comprising:

providing a device structure including a gate structure, source and drain regions disposed on a first surface of a substrate;

etching respective contact holes first through an entire thickness of the source and drain regions disposed on the first surface of the substrate and then continuing etching through a first portion of the substrate underlying the source and drain regions;

filling the contact holes with a conductive material to produce contact studs respectively through the entire thickness of the source and drain regions; and

removing a second portion of the substrate to expose a surface of the contact studs on a second surface of the substrate opposite to the gate structure.

2. The method as recited in claim 1 further comprising:

depositing a dielectric layer over the second surface of the substrate opposite to the gate structure; and

depositing a metallization wiring layer over the second surface of the substrate opposite to the gate structure, and coupled to the surface of the contact studs.

3. The method as recited in claim 2 , further comprising:

depositing a layer of protective insulator in the contact holes prior to filling the contact holes with the conductive material.

4. The method as recited in claim 3 , wherein the conductive material is tungsten.

5. The method as recited in claim 1 , wherein the etching of the contact holes is a multi-step etching process.

6. The method as recited in claim 1 , wherein the removing a second portion of the substrate comprises a chemical mechanical polishing process followed by an etch process.

7. A method for fabricating a semiconductor device comprising:

etching contact holes first through an entire thickness of the source and drain regions of a device structure and then continuing etching through a first portion of a substrate, wherein a gate structure and the source and drain regions of the device structure are disposed on a first surface of the substrate;

filling the contact holes with a conductive material to produce contact studs respectively through the entire thickness of the source and drain regions;

attaching a handling wafer to the first surface of the substrate;

removing a second portion of substrate material from a second surface of the substrate to expose a surface of the contact studs, wherein the second surface of the substrate and the exposed surface of the contact studs are opposite to the first surface; and

depositing a metallization wiring layer over the exposed surface of the contact studs, wherein the metallization layer is disposed over the second surface.

8. The method as recited in claim 7 , further comprising depositing a dielectric layer over the second surface of the substrate opposite to the gate structure.

9. The method as recited in claim 7 , further comprising:

depositing a protective insulator layer over the device structure; and

patterning a photoresist layer over the protective insulator layer, wherein areas of the source and drain regions are exposed.

10. The method as recited in claim 9 , further comprising:

etching through the source and drain regions to an underlying oxide layer forming a first portion of the contact holes;

forming a protective dielectric layer on sidewalls of the first portion of the contact holes to form an etch mask; and

etching through the underlying insulator layer and the first portion of the substrate to form a second portion of the contact holes.

11. The method as recited in claim 10 , further comprising:

performing a chemical mechanical polishing step to remove an initial amount of the second portion of the substrate; and

performing an etch or reactive ion etch step is used to remove a remainder of the second portion of the substrate, wherein dielectric layers of the device are used as an etch stop.

12. The method as recited in claim 7 , wherein the handling wafer is attached by means of an adhesive layer.

13. The method as recited in claim 1 , further comprising:

forming a gate contact stud through the gate structure on the first surface and a portion of the substrate to a respective portion of the wiring layer disposed over the second surface of the substrate.

14. The method as recited in claim 7 , further comprising:

forming a first mask on the first surface of the substrate to etch the contact holes through the source and drain regions;

forming a second mask on the first surface of the substrate to etch a contact hole through the gate structure and a second portion of the substrate which underlies the gate structure to form a gate contact hole; and

filling the gate contact hole with a conductive material to produce a gate contact stud through the gate structure and second portion of the substrate.

15. The method as recited in claim 1 , further comprising:

forming a gate stripe on the first surface, the gate stripe electrically connected to the gate structure; and

forming a gate contact stud through the gate stripe on the first surface and a portion of the substrate to a respective portion of the wiring layer disposed over the second surface of the substrate.