IP Library Granted Patent US 9,761,368
Granted Patent B2
US 9,761,368 · App. 14/978,353 · Granted Sep 12, 2017

Laminated structures for power efficient on-chip magnetic inductors

Inventors: Hariklia Deligianni (Alpine, NJ); William J. Gallagher (Ardsley, NY); Eugene J. O'Sullivan (Nyack, NY); Naigang Wang (Ossining, NY)
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
H01F27/2804C23C14/14H01F1/14708H01F27/24H01F41/042H01F2027/2809
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Quick Facts
Patent No.
US 9,761,368
App. No.
14/978,353
Granted
Sep 12, 2017
Kind
B2
Abstract

Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.

Claims (10)

1. A method of making a laminated magnetic structure comprising:

depositing, over a supporting substrate, a first sequence of layers comprising, in order, a barrier layer or an adhesion layer, a first antiferromagnetic layer, a first magnetic growth layer, and a first soft magnetic layer;

depositing an insulating non-magnetic spacer located between the first sequence of layers and a second sequence of layers;

depositing the second sequence of layers comprising, in order, a second soft magnetic layer, a second magnetic growth layer, and a second antiferromagnetic layer; and

pinning the first and second soft magnetic layers with, respectively, the first and second antiferromagnetic layers by subjecting the layers to annealing in a magnetic field;

wherein the first soft magnetic layer is directly deposited on a surface of the first magnetic growth layer, and wherein the second magnetic growth layer is directly deposited on a surface of the second soft magnetic layer.

2. The method of claim 1 , wherein the second antiferromagnetic layer is directly deposited on a surface of the second magnetic growth layer.

3. The method of claim 1 , wherein the first and second antiferromagnetic layers are independently formed by depositing an alloy of manganese, an alloy comprising platinum and manganese, an alloy comprising iron and manganese, and an alloy comprising nickel and manganese.

4. The method of claim 1 , wherein the first and second soft magnetic layers are formed by depositing a material comprising an element selected from the group consisting of CoFeB, CoWB, CoWP, CoP, CoMoP, CoMoB, NiFe, NiFeCo, and NiFeCo, and combinations thereof.

5. The method of claim 1 , wherein the layers are deposited by sputtering.

Assignments (3)
CONFIRMATORY LICENSE Recorded Jan 10, 2017
From: IBM
To: NAVY, SECRETARY OF THE UNITED STATES OF AMERICA
Reel/Frame 041328/0741 →
CONFIRMATORY LICENSE Recorded Oct 11, 2016
From: IBM
To: NAVY, SECRETARY OF THE UNITED STATES OF AMERICA
Reel/Frame 040349/0597 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2015
From: DELIGIANNI, HARIKLIA; GALLAGHER, WILLIAM J.; O'SULLIVAN, EUGENE J.; WANG, NAIGANG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037350/0583 →
Continuity (1)
Related Publication 20170178788A1 · Jun 22, 2017