Polysilsesquioxane based encapsulating material composition for UV-LED and use of phosphoric acid based catalyst therefor
A phosphoric acid-based catalyst is used as a cure accelerator for a polysilsesquioxane-based UV-LED-encapsulating material, a cured product of which has a light transmittance of 65% or more at 260 nm. A polysilsesquioxane-based UV-LED-encapsulating material composition contains a polysilsesquioxane-based UV-LED-encapsulating material and a phosphoric acid-based catalyst.
1. A polysilsesquioxane-based UV-LED-encapsulating material composition comprising a polysilsesquioxane-based UV-LED-encapsulating material and a phosphoric acid-based catalyst, wherein
the polysilsesquioxane-based UV-LED-encapsulating material comprises a resin A having an organopolysiloxane structure represented by the formula (1):
wherein each R 1 independently represents an alkyl group, each R 2 independently represents an alkoxy group or a hydroxyl group, and p 1 , q 1 , a 1 and b 1 represent positive numbers satisfying [p 1 +b 1 ×q 1 ]:[a 1 ×q 1 ]=1:0.25 to 9,
wherein a polystyrene-equivalent weight-average molecular weight of the resin A is 1500 to 8000, and wherein an amount of the phosphoric acid-based catalyst is 0.05% by mass to 1% by mass relative to the polysilsesquioxane-based UV-LED-encapsulating material.
2. A method of curing a polysilsesquioxane-based UV-LED-encapsulating material, the method comprising using a phosphoric acid-based catalyst as a cure accelerator for the curing, such that a resulting cured product has a light transmittance of 65% or more at 260 nm, wherein
the polysilsesquioxane-based UV-LED-encapsulating material comprises a resin A having an organopolysiloxane structure represented by formula (1):
wherein each R 1 independently represents an alkyl group, each R 2 independently represents an alkoxy group or a hydroxyl group, and p 1 , q 1 , a 1 and b 1 represent positive numbers satisfying [p 1 +b 1 ×q 1 ]:[a 1 ×q 1 ]=1:0.25 to 9,
wherein a polystyrene-equivalent weight-average molecular weight of the resin A is 1500 to 8000, and wherein an amount of the phosphoric acid-based catalyst is 0.05% by mass to 1% by mass relative to the polysilsesquioxane-based UV-LED-encapsulating material.
3. The polysilsesquioxane-based UV-LED-encapsulating material composition according to claim 1 , wherein the polysilsesquioxane-based UV-LED-encapsulating material further comprises an oligomer B having an organopolysiloxane structure represented by formula (2):
wherein R 1 and R 2 represent the same meaning as in the formula (1) and p 2 , q 2 , r 2 , a 2 and b 2 represent numbers equal to or larger than 0 satisfying [a 2 ×q 2 ]/[(p 2 +b 2 ×q 2 )+a 2 ×q 2 +(r 2 +q 2 )]=0 to 0.3.
4. The polysilsesquioxane-based UV-LED-encapsulating material composition according to claim 1 , wherein R 1 is an alkyl group having one carbon atom.
5. The polysilsesquioxane-based UV-LED-encapsulating material composition according to claim 1 , wherein R 1 is a methyl group or an ethyl group, and R 2 is a methoxy group, an ethoxy group, an isopropoxy group or a hydroxyl group.
6. The polysilsesquioxane-based UV-LED-encapsulating material composition according to claim 1 , wherein the polystyrene-equivalent weight-average molecular weight of the resin A is 2000 to 5000.
7. The polysilsesquioxane-based UV-LED-encapsulating material composition according to claim 3 , wherein the polystyrene-equivalent weight-average molecular weight of the oligomer B is 250 to 1000.
8. The method of curing a polysilsesquioxane-based UV-LED-encapsulating material according to claim 2 , wherein the polysilsesquioxane-based UV-LED-encapsulating material further comprises an oligomer B having an organopolysiloxane structure represented by the formula (2):
wherein R 1 and R 2 represent the same meaning as in the formula (1) and p 2 , q 2 , r 2 , a 2 and b 2 represent numbers equal to or larger than 0 satisfying [a 2 ×q 2 ]/[(p 2 +b 2 ×q 2 )+a 2 ×q 2 +(r 2 +q 2 )]=0 to 0.3.
9. The method of curing a polysilsesquioxane-based UV-LED-encapsulating material according to claim 2 , wherein R 1 is an alkyl group having one carbon atom.
10. The method of curing a polysilsesquioxane-based UV-LED-encapsulating material according to claim 2 , wherein R 1 is a methyl group or an ethyl group, and R 2 is a methoxy group, an ethoxy group, an isopropoxy group or a hydroxyl group.
11. The method of curing a polysilsesquioxane-based UV-LED-encapsulating material according to claim 2 , wherein the polystyrene-equivalent weight-average molecular weight of the resin A is 2000 to 5000.
12. The method of curing a polysilsesquioxane-based UV-LED-encapsulating material according to claim 8 , wherein the polystyrene-equivalent weight-average molecular weight of the oligomer B is 250 to 1000.