Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes
A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.
1. A method of preparing a photosensitive device, comprising:
providing a structure having at least one first electrode and a bulk heterojunction, wherein said bulk heterojunction comprises at least one first organic photoactive material and at least one second organic photoactive material, wherein said first and second organic photoactive materials are small-molecule materials, and at least one of the first and second organic photoactive materials is a squaraine;
providing at least one solvent;
vaporizing at least a portion of the solvent; and
exposing at least a portion of the bulk heterojunction to the vaporized solvent, wherein said exposure to the vaporized solvent increases the crystallinity of at least one of the first and second organic photoactive materials.
2. The method of claim 1 , further comprising thermally annealing said structure.
3. The method of claim 2 , wherein the thermal annealing takes place after exposing the bulk heterojunction to the vaporized solvent.
4. The method of claim 2 , wherein the thermal annealing takes place at a temperature of about 50° C. or greater.
5. The method of claim 1 , wherein the structure is prepared by depositing the at least one first and the at least one second small molecule organic photoactive materials over the at least one first electrode.
6. The method of claim 5 , wherein the deposition is performed by spin-casting.
7. The method of claim 6 , wherein the at least one first and the at least one second small molecule organic photoactive materials are cast from a casting solvent having a boiling point no greater than about 70° C. at 1 atm.
8. The method of claim 7 , wherein the casting solvent is chloroform.
9. The method of claim 6 , wherein the at least one first and the at least one second small molecule organic photoactive materials are cast from a casting solvent having a boiling point greater than about 175° C. at 1 atm.
10. The method of claim 9 , wherein the casting solvent is 1,2-dichlorobenzene.
11. The method of claim 5 , further comprising positioning an interfacial layer between the at least one first electrode and the bulk heterojunction.
12. The method of claim 1 , further comprising patterning at least one second electrode over the bulk heterojunction.
13. The method of claim 12 , further comprising positioning at least one blocking layer between the bulk heterojunction and the at least one second electrode.
14. The method of claim 1 , wherein the at least one blocking layer comprises BCP.
15. The method of claim 1 , wherein the bulk heterojunction is exposed to the vaporized solvent in a closed container.
16. The method of claim 1 , wherein the bulk heterojunction is exposed to the vaporized solvent for a period of about 5 minutes to about 30 minutes.
17. The method of claim 1 , wherein the at least one solvent is dichloromethane.
18. The method of claim 1 , wherein the squaraine is 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine.
19. The method of claim 1 , wherein one of the first and second organic photoactive materials is PC 70 BM.
20. A method of enhancing the crystallinity of a bulk heterojunction in a photosensitive device, said bulk heterojunction comprising at least one first organic photoactive material and at least one second organic photoactive material, wherein said first and second organic photoactive materials are small-molecule materials, and at least one of the first and second organic photoactive materials is a squaraine, comprising:
exposing at least a portion of the bulk heterojunction to a vaporized solvent, wherein the photosensitive device exhibits one or more of the following characteristics when compared to said device before exposure to the vaporized solvent:
increased fill factor (FF);
increased external quantum efficiency (EQE); and
increased current density versus voltage (J-V).
21. The method of claim 20 , further comprising thermally annealing the bulk heterojunction.
22. The method of claim 21 , wherein the thermal annealing takes place after exposing the bulk heterojunction to the vaporized solvent.
23. The method of claim 21 , wherein the thermal annealing takes place at a temperature of about 50° C. or greater.
24. The method of claim 20 , wherein the bulk heterojunction is exposed to the vaporized solvent in a closed container.
25. The method of claim 24 , wherein the bulk heterojunction is exposed to the vaporized solvent for a period of about 5 minutes to about 30 minutes.
26. The method of claim 20 , wherein the at least one solvent is dichloromethane.
27. The method of claim 20 , wherein the squaraine is 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine.
28. The method of claim 20 , wherein one of the first and second organic photoactive materials is PC 70 BM.