Conductive lines in circuits
In a method, conductive lines used in a circuit are formed. Signal traces of a plurality of signal traces are grouped to a first group of first signal traces or a second group of second signal traces. A first mask is used to form a first conductive line for a first signal trace of the first group. A second mask is used to form a second conductive line for a second signal trace of the second group. The first traces each have a first width. The second traces each have a second width different from the first width. The grouping is based on at least one of following conditions: a current flowing through a signal trace of the signal traces of the plurality of signal traces, a length of the signal trace, a resistivity of the signal trace, or a resistivity-capacitive constant of the signal trace.
1. A method of forming conductive lines used in a circuit, comprising:
grouping signal traces of a plurality of signal traces to a first group of first signal traces or a second group of second signal traces;
fabricating, using a first mask, a first conductive line for a first signal trace of the first group; and
fabricating, using a second mask, a second conductive line for a second signal trace of the second group,
wherein
the first signal traces each have a first width;
the second signal traces each have a second width different from the first width; and
the grouping is based on at least one of following conditions
a current flowing through a signal trace of the signal traces of the plurality of signal traces;
a length of the signal trace of the signal traces of the plurality of signal traces;
a resistivity of the signal trace of the signal traces of the plurality of signal traces; or
a resistivity-capacitive constant of the signal trace of the signal traces of the plurality of signal traces.
2. The method of claim 1 , wherein
the second mask is used after the first mask; and
a width of the second conductive line is larger than a width of the first conductive line.
3. The method of claim 1 wherein
the second mask is used after the first mask; and
a width of the first conductive line is larger than a width of the second conductive line.
4. The method of claim 1 , wherein
the second mask is used after the first mask; and
a length of the second conductive line is larger than a predetermined value.
5. The method of claim 4 , wherein
the predetermined value is based on at least one of
a predetermined width of a metal structure in a semiconductor structure;
a predetermined width of a poly structure in the semiconductor structure;
a predetermined width between the metal structure and the poly structure;
a predetermined width between two metal structures; or
a predetermined minimum width between two metal structures.
6. The method of claim 4 , wherein
the predetermined value is about 5 μm.
7. The method of claim 1 , wherein
the second mask is used after the first mask; and
a resistivity of the second conductive line is lower than a resistivity of the second conductive line otherwise would have been if the second conductive line otherwise would have been formed by the first mask.
8. The method of claim 1 , wherein
the second mask is used after the first mask; and
a resistivity-capacitive constant of the second conductive line is lower than a resistivity-capacitive constant of the second conductive line otherwise would have been if the second conductive line otherwise would have been formed by the first mask.
9. The method of claim 1 , wherein
the second mask is used after the first mask; and
a current capacity of the second conductive line is lower than a current capacity of the second conductive line otherwise would have been if the second conductive line otherwise would have been formed by the first mask.
10. A method comprising:
based on a first mask used to form a first conductive line and a second mask used to form a second conductive line,
fabricating, using the first mask, a third conductive line if a width of the first conductive line is larger than a width of the second conductive line; or
fabricating, using the second mask, the third conductive line if the width of the second conductive line is larger than the width of the first conductive line,
wherein
the third conductive line connects a first circuit element that is distant from a second circuit element by a predetermined value which is representative of distance.
11. The method of claim 10 wherein
the predetermined value is based on at least one of:
a predetermined width of a metal structure in a semiconductor structure;
a predetermined width of a poly structure in the semiconductor structure;
a predetermined width between the metal structure and the poly structure;
a predetermined width between two metal structures; or
a predetermined minimum width between two metal structures.
12. The method of claim 11 , wherein
a length of the third conductive line is greater than five distance units; and
a distance unit includes at least one of:
the predetermined width of the metal structure in the semiconductor structure;
the predetermined width of the poly structure in the semiconductor structure;
the predetermined width between the metal structure and the poly structure; or
the predetermined minimum width between the two metal structures.
13. The method of claim 10 , wherein
the predetermined value is about 5 μm.
14. The method of claim 10 , wherein
the first circuit element includes a source of a P-type transistor;
the second circuit element includes a drain of an N-type transistor; and
the P-type transistor and the N-type transistor form an inverter.
15. The method of claim 10 , wherein
the first circuit element includes an output of a first circuit; and
the second circuit element includes an input of a second circuit.
16. The method of claim 10 , wherein
the first circuit element includes an output of a first inverter; and
the second circuit element includes an input of a second inverter.
17. The method of claim 16 , wherein
the first inverter and the second inverter are part of an inverter ring.
18. A method comprising:
based on a first circuit similar to a second circuit, a first mask used to form first conductive lines having a first width, a second mask used to form second conductive lines having a second width, the first width being different from the second width,
fabricating, using the first mask, third conductive lines of the first circuit and fourth conductive lines of the second circuit, wherein each conductive line of the third conductive lines corresponds to each conductive line of the fourth conductive lines; and
fabricating, using the second mask, fifth conductive lines of the first circuit and sixth conductive lines of the second circuit, wherein each conductive line of the fifth conductive lines corresponds to each conductive line of the sixth conductive lines,
wherein
the third conductive lines of the first circuit carry respective first currents and the fifth conductive lines of the first circuit carry respective second currents; and
a current value of the first currents is less than a current value of the second currents.
19. The method of claim 18 , wherein
the first circuit and the second circuit are each part of a same symmetrical circuit.
20. The method of claim 18 , wherein
the first circuit and the second circuit are each part of a same current mirror.