Semiconductor device and method of fabricating the same
A semiconductor device includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, first and second lower vias in the insulating layer, first and second lower metal lines provided on the insulating layer and respectively connected to the first and second lower vias, and first and second upper metal lines provided on and respectively connected to the first and second lower metal lines. When viewed in a plan view, the first lower via is overlapped with the second upper metal line, and the second lower via is overlapped with the first upper metal line.
1. A semiconductor device comprising:
a substrate;
a gate electrode crossing an active pattern of the substrate;
an interlayer insulating layer covering the active pattern and the gate electrode;
a first lower via provided in the interlayer insulating layer and electrically connected to the active pattern;
a second lower via provided in the interlayer insulating layer and electrically connected to the gate electrode;
a first lower metal line provided on the interlayer insulating layer, the first lower metal line extending in a first direction and directly contacting the first lower via;
a second lower metal line provided on the interlayer insulating layer, the second lower metal line extending in the first direction and directly contacting the second lower via;
a first upper metal line provided on the first and second lower metal lines, the first upper metal line extending in a second direction crossing the first direction and being electrically connected to the first lower metal line; and
a second upper metal line provided on the first and second lower metal lines, the second upper metal line extending in the second direction and being electrically connected to the second lower metal line,
wherein, when viewed in a plan view, the first lower via is overlapped with the second upper metal line and the second lower via is overlapped with the first upper metal line.
2. The device of claim 1 , further comprising:
a first upper via provided between the first lower metal line and the first upper metal line, the first upper via electrically connecting the first lower metal line and the first upper metal line; and
a second upper via provided between the second lower metal line and the second upper metal line, the second upper via electrically connecting the second lower metal line and the second upper metal line,
wherein, when viewed in a plan view, the first upper via is spaced apart from the first lower via in the first direction, and the second upper via is spaced apart from the second lower via in a direction opposite to the first direction.
3. The device of claim 1 , further comprising:
a third lower via provided in the interlayer insulating layer, the third lower via electrically connecting to another active pattern of the substrate; and
a third lower metal line provided on the interlayer insulating layer, the third lower metal line extending in the first direction and directly contacting the third lower via,
wherein the third lower metal line is electrically connected to the first upper metal line, and
the third lower via is overlapped with the second upper metal line, when viewed in a plan view.
4. The device of claim 1 , wherein the first and second lower metal lines are positioned at substantially the same level, when viewed in the plan view,
the first and second upper metal lines are positioned at substantially the same level, when viewed in the plan view,
the first and second lower metal lines are spaced apart from each other in the second direction, and
the first and second upper metal lines are spaced apart from each other in the first direction.
5. The device of claim 1 , further comprising a device isolation layer provided in the substrate to define the active pattern,
wherein the active pattern comprises an upper portion protruding upward from the device isolation layer.
6. The device of claim 1 , wherein the active pattern comprises source and drain regions provided at both sides of the gate electrode, and
the first lower via is electrically connected to at least one of the source/drain regions.
7. The device of claim 1 , wherein a width of the second lower metal line is greater than a width of the first lower metal line.
8. A semiconductor device comprising:
a substrate;
a plurality of transistors disposed on the substrate;
a first interlayer insulating layer covering the transistors;
a first lower via and a second lower via provided in the first interlayer insulating layer, each of the first and second lower vias being electrically connected to at least one of the transistors;
a first lower metal line provided on the first interlayer insulating layer, the first lower metal line extending in a first direction and directly contacting the first lower via;
a second lower metal line provided on the first interlayer insulating layer, the second lower metal line extending in the first direction and directly contacting the second lower via;
a second interlayer insulating layer covering the first and second lower metal lines;
a first upper via provided in the second interlayer insulating layer, the first upper via directly contacting the first lower metal line;
a second upper via provided in the second interlayer insulating layer, the second upper via directly contacting the second lower metal line;
a first upper metal line provided on the second interlayer insulating layer, the first upper metal line extending in a second direction crossing the first direction and directly contacting the first upper via; and
a second upper metal line provided on the second interlayer insulating layer, the second upper metal line extending in the second direction and directly contacting the second upper via,
wherein, when viewed in a plan view, the first upper via is spaced apart from the first lower via in the first direction and the second upper via is spaced apart from the second lower via in a direction opposite to the first direction.
9. The device of claim 8 , wherein the first lower via, the first lower metal line, and the first upper via are disposed to allow signals output from the transistor that is connected to the first lower via to be transmitted to the first upper metal line through the first lower via, the first lower metal line and the first upper via.
10. The device of claim 8 , wherein the second upper metal line, the second upper via, the second lower metal line, and the second lower via are disposed to allow signals to be applied from the second upper metal line to a gate of the transistor that is connected to the second lower via.
11. The device of claim 8 , wherein, when viewed in a plan view, an end portion of the first lower metal line and an end portion of the second lower metal line are disposed to be parallel to the second upper metal line.
12. The device of claim 8 , wherein, when viewed in a plan view, the first lower via is overlapped with the second upper metal line and the second lower via is overlapped with the first upper metal line.
13. The device of claim 8 , wherein a width of the second lower metal line is greater than a width of the first lower metal line.