Semiconductor composition containing iron, dysprosium, and terbium
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
1. An amorphous semiconductor composition comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one element selected from the group consisting of an oxidizing element and a reducing element, said composition having an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
2. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 10 to 60 atomic percent iron.
3. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 10 to 50 atomic percent iron.
4. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 25 to 55 atomic percent dysprosium.
5. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 20 to 30 atomic percent terbium.
6. An amorphous semiconductor composition in accordance with claim 1 wherein said oxidizing element is oxygen.
7. An amorphous semiconductor composition in accordance with claim 1 wherein said reducing element is at least one element selected from the group consisting of sulfur, hydrogen, and nitrogen.
8. An amorphous semiconductor composition in accordance with claim 1 wherein said optical transmittance is at least 70% in the visible spectrum.
9. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition is characterized by room temperature ferromagnetism.
10. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition is characterized by semiconductor electrical behavior.
11. A semiconductor device comprising a substrate having an amorphous semiconductor layer adherently disposed thereon, said amorphous semiconductor layer comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one element selected from the group consisting of an oxidizing element and a reducing element, said composition having an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
12. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 10 to 60 atomic percent iron.
13. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 10 to 50 atomic percent iron.
14. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 25 to 55 atomic percent dysprosium.
15. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 20 to 30 atomic percent terbium.
16. A semiconductor device in accordance with claim 11 wherein said oxidizing element is oxygen.
17. A semiconductor device in accordance with claim 11 wherein said reducing element is at least one element selected from the group consisting of sulfur, hydrogen, and nitrogen.
18. A semiconductor device in accordance with claim 11 wherein said optical transmittance is at least 70% in the visible spectrum.
19. A semiconductor device in accordance with claim 11 wherein said semiconductor composition is characterized by room temperature ferromagnetism.
20. A semiconductor device in accordance with claim 11 wherein said semiconductor composition is characterized by semiconductor electrical behavior.