Semiconductor package and fabrication method thereof
A semiconductor package is provided, which includes: a circuit structure having a first bottom surface and a first top surface opposite to the first bottom surface; at least a semiconductor element disposed on the first top surface of the circuit structure and electrically connected to the circuit structure; an encapsulant formed on the first top surface of the circuit structure to encapsulate the semiconductor element, wherein the encapsulant has a second bottom surface facing the first top surface of the circuit structure and a second top surface opposite to the second bottom surface; and a strengthening layer formed on the second top surface of the encapsulant, or formed between the circuit structure and the encapsulant, or formed on the first bottom surface of the circuit structure, thereby effectively preventing the encapsulant from warping and the semiconductor element from cracking.
1. A semiconductor package, comprising:
a circuit structure having a first bottom surface and a first top surface opposite to the first bottom surface;
at least a semiconductor element disposed on the first top surface of the circuit structure and electrically connected to the circuit structure;
an encapsulant formed on the first top surface of the circuit structure to encapsulate the semiconductor element, wherein the encapsulant has a second bottom surface facing the first top surface of the circuit structure and a second top surface opposite to the second bottom surface; and
a strengthening layer formed between the circuit structure and the encapsulant, or formed on the first bottom surface of the circuit structure, wherein the strengthening layer is made of a semiconductor material.
2. The semiconductor package of claim 1 , wherein the circuit structure comprises at least a dielectric layer, a plurality of conductive vias formed in the dielectric layer, and at least a circuit layer formed on the dielectric layer and electrically connected to the conductive vias, the circuit layer having a plurality of first conductive pads.
3. The semiconductor package of claim 1 , when the strengthening layer is formed between the circuit structure and the encapsulant, further comprising a first insulating layer formed on the first bottom surface of the circuit structure and having a plurality of first through holes for exposing a plurality of conductive vias of the circuit structure.
4. The semiconductor package of claim 3 , further comprising a plurality of second conductive pads formed on the first insulating layer and in the first through holes and electrically connected to the conductive vias of the circuit structure.
5. The semiconductor package of claim 1 , when the strengthening layer is formed between the circuit structure and the encapsulant, the strengthening layer has a plurality of openings for exposing a plurality of first conductive pads of the circuit structure.
6. The semiconductor package of claim 1 , when the strengthening layer is formed on the first bottom surface of the circuit structure, further comprising a first insulating layer formed between the circuit structure and the strengthening layer, and a plurality of second through holes penetrating the strengthening layer and the first insulating layer and exposing a plurality of conductive vias of the circuit structure.
7. The semiconductor package of claim 6 , further comprising an insulating layer formed on the strengthening layer and wall surfaces of the second through holes.
8. The semiconductor package of claim 7 , further comprising a plurality of second conductive pads formed on the insulating layer and in the second through holes and electrically connected to the conductive vias of the circuit structure.
9. The semiconductor package of claim 1 , further comprising a second insulating layer formed on the first top surface of the circuit structure and exposing a plurality of first conductive pads of the circuit structure.
10. The semiconductor package of claim 1 , further comprising a UBM layer formed on a plurality of first conductive pads of the circuit structure, and a plurality of conductive elements formed between the semiconductor element and the UBM layer.
11. The semiconductor package of claim 10 , further comprising an underfill formed on an active surface of the semiconductor element for encapsulating the UBM layer and the conductive elements.
12. The semiconductor package of claim 1 , wherein the semiconductor material is silicon.