CMOS image sensor structure with crosstalk improvement
A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.
1. A semiconductor device, comprising:
a substrate;
a device layer disposed on the substrate, wherein a plurality of trenches are formed in the device layer and the substrate, and the trenches divide the device layer into a plurality of photoelectric devices;
an anti-reflective coating layer conformally covering the device layer, the substrate, and the trenches;
a plurality of reflective structures disposed on the anti-reflective coating layer in the trenches respectively, wherein the reflective structures separate the photoelectric devices from each other, and the reflective structures are formed from metal;
a composite grid structure overlying the anti-reflective coating layer and the reflective structures, wherein the composite grid structure comprises a plurality of cavities passing through the composite grid structure, and the composite grid structure comprises a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures;
a passivation layer conformally covering the composite grid structure; and
a plurality of color filters respectively filling the cavities.
2. The semiconductor device of claim 1 , wherein each of the reflective structures is a deep trench isolation structure.
3. The semiconductor device of claim 2 , wherein each of the reflective structures has a height ranging from 0.1 micrometer to 2.5 micrometer.
4. The semiconductor device of claim 1 , wherein the metal grid layer is formed from tungsten or an aluminum-copper alloy.
5. The semiconductor device of claim 1 , wherein the metal grid layer and the reflective structures are formed from the same material.
6. The semiconductor device of claim 1 , wherein the metal grid layer directly contacts with the reflective structures.
7. The semiconductor device of claim 1 , further comprising a buffer layer disposed on the anti-reflective coating layer and the reflective structures, and between the anti-reflective coating layer and the metal grid layer.
8. The semiconductor device of claim 1 , further comprising a plurality of micro lenses respectively covering top surfaces of the color filters.
9. The semiconductor device of claim 1 , wherein top surfaces of the color filters are elevated at the same level with a top of the passivation layer.
10. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate;
forming a device layer on the substrate;
forming a plurality of trenches extending from the device layer to the substrate to divide the device layer into a plurality of photoelectric devices;
forming an anti-reflective coating layer conformally covering the device layer, the substrate, and the trenches;
forming a plurality of reflective structures on the anti-reflective coating layer in the trenches respectively, wherein the reflective structures separate the photoelectric devices from each other, and the reflective structures are formed from metal;
forming a composite structure over the anti-reflective coating layer and the reflective structures, wherein the forming the composite structure is performed to sequentially form a metal layer and a dielectric layer stacked on the anti-reflective coating layer and the reflective structures;
forming a plurality of cavities in the composite structure and passing through the composite structure, so as to form a composite grid structure;
forming a passivation layer conformally covering the composite grid structure; and
forming a plurality of color filters respectively filling the cavities.
11. The method of claim 10 , wherein between the forming the reflective structures and the forming the composite structure, the method further comprising forming a buffer layer on the anti-reflective coating layer and the reflective structures.
12. The method of claim 10 , wherein the forming the cavities comprises removing a portion of the dielectric layer and a portion of the metal layer by using one single etching process.
13. The method of claim 10 , wherein after the forming the color filters, the method further comprising forming a plurality of micro lenses respectively covering top surfaces of the color filters, wherein the top surfaces of the color filters are elevated at the same level with a top of the passivation layer.
14. The method of claim 10 , wherein the forming the reflective structures and the forming the metal layer are performed by using different deposition processes.
15. The method of claim 10 , wherein the color filters are formed to have top surfaces which are elevated at the same level with a top of the passivation layer.
16. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate;
forming a device layer on the substrate;
forming a plurality of trenches extending from the device layer to the substrate;
forming an anti-reflective coating layer conformally covering the device layer, the substrate, and the trenches;
forming a composite structure on the anti-reflective coating layer, wherein the forming the composite structure comprises forming a metal layer filling the trenches and disposed on the anti-reflective coating layer, and forming a dielectric layer stacked on the metal layer;
forming a plurality of cavities in the composite structure and passing through the composite structure, so as to form a composite grid structure, wherein the forming the composite grid structure is performed to form the composite grid structure covering the trenches;
forming a passivation layer conformally covering the composite grid structure; and
forming a plurality of color filters respectively filling the cavities.
17. The method of claim 16 , wherein the forming the cavities comprises removing a portion of the dielectric layer and a portion of the metal layer by using one single etching process.
18. The method of claim 16 , wherein the forming the cavities comprises exposing a portion of the anti-reflective coating layer.
19. The method of claim 16 , wherein the forming the color filters is performed to form the color filters having top surfaces which are elevated at the same level with a top of the passivation layer.
20. The method of claim 16 , wherein after the forming the color filters, the method further comprising forming a plurality of micro lenses respectively covering top surfaces of the color filters.