Image sensor device, image processing device and method for manufacturing image sensor device
According to one embodiment, an image sensor device includes a sensor array on a semiconductor substrate, the sensor array including blocks, each of the blocks including a pixel and outputting a signal of the pixel; a first insulating layer on the sensor array; semiconductor layers on the first insulating layer; analog-digital converting circuits on the semiconductor layers, the analog-digital converting circuits corresponding to the blocks and processing the signal; a second insulating layer on the first insulating layer and the analog-digital converting circuits; and interconnect portions electrically connecting the analog-digital converting circuits to the blocks via a region between the semiconductor layers, the interconnect portions extending across the first insulating layer and the second insulating layer.
1. An image sensor device comprising:
a sensor array disposed on a semiconductor substrate, the sensor array including blocks, each of the blocks including at least one pixel and outputting a signal of the at least one pixel;
a first insulating layer disposed on the sensor array;
semiconductor layers disposed on the first insulating layer;
analog-digital converting circuits disposed on the semiconductor layers, the analog-digital converting circuits corresponding to the blocks and processing the signal;
a second insulating layer disposed on the first insulating layer and the analog-digital converting circuits; and
interconnect portions electrically connecting the analog-digital converting circuits to the blocks via a region between the semiconductor layers, the interconnect portions extending across the first insulating layer and the second insulating layer.
2. The device according to claim 1 , wherein
the each of the blocks includes M×N pixels (M and N are integers), and
the analog-digital converting circuits correspond to the blocks respectively.
3. The device according to claim 1 , wherein
the semiconductor substrate is a monocrystalline substrate, and
the semiconductor layers are monocrystalline layers or polycrystalline layers.
4. The device according to claim 1 , wherein
the semiconductor layers include at least Si and Sn, and
the semiconductor layers have a Si composition of 20% or more and a Sn composition of 2% or less.
5. The device according to claim 4 , wherein
the semiconductor layers further include Ge, and
the semiconductor layers are mixed crystal layers.
6. The device according to claim 1 , further comprising:
a lens array disposed on a side of a first face of the semiconductor substrate,
wherein
the analog-digital converting circuits are disposed on a side of a second face of the semiconductor substrate, and
the second face is opposed to the first face.
7. An image processing device comprising:
the image sensor device according to claim 1 ; and
a processor for image processing, the processor having a face on which bumps are disposed,
wherein the analog-digital converting circuits are electrically connected to the bumps.
8. An image sensor device comprising;
a sensor array disposed on a first semiconductor substrate, the sensor array including blocks, each of the blocks including at least one pixel and outputting a signal of the at least one pixel;
first bumps disposed on the first semiconductor substrate and connected to an output end of the each of the blocks;
an image processing circuit disposed on a second semiconductor substrate;
an first insulating layer disposed on the image processing circuit;
semiconductor layers disposed on the first insulating layer;
analog-digital converting circuits disposed on the semiconductor layers, the analog-digital converting circuits corresponding to the blocks and processing the signal;
a second insulating layer disposed on the first insulating layer and the analog-digital converting circuits;
interconnect portions electrically connecting the analog-digital converting circuit to the image processing circuit via a region between the semiconductor layers, the interconnect portions extending across the first insulating layer and the second insulating layer; and
second bumps connected to an input end of each of the analog-digital converting circuits, the second bumps being connected to the first bumps.
9. The device according to claim 8 , wherein
the each of the blocks includes M×N pixels (M and N are integers), and
the analog-digital converting circuits correspond to the blocks respectively.
10. The device according to claim 8 , wherein
the first and second semiconductor substrates are monocrystalline substrates, and
the semiconductor layers are monocrystalline layers or polycrystalline layers.
11. The device according to claim 8 , wherein
the semiconductor layers include at least Si and Sn, and
the semiconductor layers have a Si composition of 20% or more and a Sn composition of 2% or less.
12. The device according to claim 11 , wherein
the semiconductor layers further includes Ge, and
the semiconductor layers are mixed crystal layers.
13. The device according to claim 8 , further comprising:
a lens array disposed on a side of a first face of the semiconductor substrate,
wherein
the analog-digital converting circuits are disposed on a side of a second face of the semiconductor substrate, and
the second face is opposed to the first face.
14. A method for manufacturing an image sensor device comprising:
forming a sensor array on a semiconductor substrate, the sensor array including blocks, each of blocks including at least one pixel and outputting a signal of the at least one pixel;
forming a first insulating layer on the sensor array;
forming semiconductor layers on the first insulating layer;
forming analog-digital converting circuits on the semiconductor layers, the analog-digital converting circuits corresponding to the blocks and processing the signal;
forming a second insulating layer on the first insulating layer and the analog-digital converting circuits; and
forming interconnect portions across the first insulating layer and the second insulating layer to electrically connect the analog-digital converting circuits to the blocks via a region between the semiconductor layers.
15. The method according to claim 14 , wherein
the semiconductor substrate is a monocrystalline substrate, and
the semiconductor layers are monocrystalline layers or polycrystalline layers.
16. The method according to claim 14 , wherein
the semiconductor layers include at least Si and Sn, and
the semiconductor layers have a Si composition of 20% or more and a Sn composition of 2% or less.
17. The method according to claim 16 , wherein
the semiconductor layers further includes Ge, and
the semiconductor layers are mixed crystal layers.
18. The method according to claim 14 , wherein
a temperature range for forming of the semiconductor layers is from 250° C. to 400° C.
19. The method according to claim 14 , wherein
the forming of the semiconductor layers includes:
forming a layer selected from the group consisting of an amorphous Si layer, an amorphous Ge layer, an amorphous SiGe layer, an amorphous GeSn layer, an amorphous SiGeSn layer, or a stacked layer thereof.
dividing the layer into a plurality of layers, and
performing thermal treatment to crystallize the plurality of layers, the thermal treatment having a temperature range from 250° C. to 400° C.
20. The method according to claim 14 , further comprising:
forming a lens array on a side of a first face of the semiconductor substrate, the first face being opposed to a second face of the semiconductor substrate,
wherein the analog-digital converting circuits are formed on a side of the second face.