Photoelectric conversion device and optical signal receiving unit having photodiode

1. A photoelectric conversion device, comprising:

a substrate having a first surface and a second surface that is an opposite side of the first surface, wherein the first surface is a light incidence surface;

a photodiode (PD) formed at the first surface of the substrate, the PD including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light absorptive semiconductor layer interposed between the first and second conductivity-type semiconductor layers, the first conductivity-type semiconductor layer, the light absorptive semiconductor layer, and the second conductivity-type semiconductor layer being arranged in a vertical direction from the first surface of the substrate;

a reflective layer formed on the second surface of the substrate; and

a microlens formed on the light incidence surface of the substrate, wherein:

a portion of the first conductivity-type semiconductor layer is positioned to receive a first portion of light from the light incident surface without said first portion of light first passing through the light absorptive semiconductor layer or the second conductivity-type semiconductor layer, and

a portion of the second conductivity-type semiconductor layer is positioned to receive a second portion of light from the light incident surface without said second portion of light first passing through the light absorptive semiconductor layer or the first conductivity-type semiconductor layer.

2. The device as claimed in claim 1 , wherein the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the light absorptive semiconductor layer each directly contact the substrate.

3. The device as claimed in claim 1 , wherein the second conductivity-type semiconductor layer is interposed between the light absorptive semiconductor layer and the reflective layer.

4. The device as claimed in claim 3 , wherein a horizontal area of the first conductivity-type semiconductor layer is less than a horizontal area of the second conductivity-type semiconductor layer.

5. The device as claimed in claim 3 , wherein a horizontal area of the light absorptive semiconductor layer is less than a horizontal area of the second conductivity-type semiconductor layer.

6. The device as claimed in claim 3 , wherein a horizontal area of the microlens is larger than a horizontal area of the light absorptive semiconductor layer.

7. The device as claimed in claim 3 , wherein a center of the microlens is offset from a center of the light absorptive semiconductor layer.

8. The device as claimed in claim 7 , further comprising a reflective metal layer covering a portion of the PD.

9. The device as claimed in claim 1 , further comprising a lattice coupler formed in the first surface of the substrate and a waveguide interposed between the lattice coupler and the PD,

wherein the microlens is formed on the lattice coupler.

10. The device as claimed in claim 1 , further comprising an anti-reflective layer interposed between the substrate and the microlens.

11. The device as claimed in claim 1 , further comprising an optical isolator layer interposed between the substrate and the microlens.

12. The device as claimed in claim 1 , wherein the reflective layer has a concave shape toward the PD.

13. An apparatus, comprising:

an optical input, the optical input receiving light traveling in a first direction;

a reflector, the light received at the optical input being directed to the reflector;

a lens disposed in a path of the light between the optical input and the reflector such that light from the optical input that impinges on the reflector passes through the lens, the lens directing the light to the reflector, at least some of the light impinging on the lens being directed in a direction different from the first direction; and

an optoelectronic element disposed in a path of the light, the optoelectronic element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light absorptive semiconductor layer interposed between the first and second conductivity-type semiconductor layers, the first conductivity-type semiconductor layer, the light absorptive semiconductor layer, and the second conductivity-type semiconductor layer being arranged in a vertical direction from a light incidence surface of the optoelectronic element, wherein

the first conductivity-type semiconductor layer is positioned to receive a first portion of light from the lens without said first portion of light first passing through the light absorptive semiconductor layer or the second conductivity-type semiconductor layer, and

the second conductivity-type semiconductor layer is positioned to receive a second portion of light from the lens without said second portion of light first passing through the light absorptive semiconductor layer or the first conductivity-type semiconductor layer.

14. The apparatus as claimed in claim 13 , wherein all light input via the optical input and impinging on the reflector passes through the lens.

15. The apparatus as claimed in claim 13 , wherein the lens is a refractive element and has a curve, and a normal to a tangent at the center of the lens intersects the lens, the optoelectronic element, and the reflector.

16. The apparatus as claimed in claim 13 , wherein the lens is a refractive element and has a curve, a normal to a tangent at the center of the lens intersects the lens and the reflector, and the optoelectronic element is laterally offset from the center of the lens.

17. The apparatus as claimed in claim 13 , wherein light input via the optical input impinges on the optoelectronic element at two opposite surfaces of the optoelectronic element.