Apparatus and method for treating a substrate
Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode. The substrate treating apparatus for manufacturing a phase-change memory includes a load lock chamber into/from which a plurality of substrates are loaded or unloaded, the load lock chamber being converted between an atmosphere state and a vacuum state, a nitriding chamber in which nitriding is performed on a surface of a substrate on which a bottom electrode is disposed, the nitriding chamber being coupled to one side of a plurality of sides of the vacuum transfer chamber, and a process chamber in which a phase-change layer is deposited on the surface of the substrate on which nitriding is performed in the nitriding process chamber, the process chamber being coupled to one of the plurality of sides of the vacuum transfer chamber.
1. A substrate treating method for manufacturing a phase-change memory, the substrate treating method comprising:
forming a bottom electrode on a substrate on which a pattern is formed;
performing surface treating through plasma treating using an H 2 -containing gas for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed;
performing nitriding to remove hydrogen bonding generated on the surface of the substrate from which the impurities are removed; and
successively depositing a phase-change layer and a top electrode on the bottom electrode,
wherein the nitriding comprises substituting nitrogen bonding for the hydrogen bonding attached to the surface of the substrate during the surface treating.
2. The substrate treating method of claim 1 , wherein the forming of the bottom electrode comprises:
forming a bottom electrode contact hole in which the bottom electrode is formed after a dielectric is deposited on the substrate;
depositing a nitride layer on the surface of the substrate in which the contact hole is formed; and
removing the nitride layer remaining except for the nitride layer formed in the bottom electrode contact hole.
3. The substrate treating method of claim 1 , wherein the nitriding comprises annealing or plasma treating under a nitrogen-containing atmosphere.
4. The substrate treating method of claim 3 , wherein the annealing is performed by allowing at least one of N2, N2O, and NH3 to flow.
5. The substrate treating method of claim 4 , wherein the annealing is performed under conditions such as a pressure of approximately 8 Torr or more and a temperature of approximately 700° C. or more.
6. The substrate treating method of claim 4 , wherein the annealing is performed by allowing at least one of N2, N2O, and NH3 to flow at a flow rate of approximately 1000 sccm for approximately 10 minutes.
7. The substrate treating method of claim 3 , wherein the plasma treating is performed by generating a plasma from at least one of N2, N2O, and NH3.
8. The substrate treating method of claim 7 , wherein the plasma treating is performed at a temperature of approximately 300° C.
9. The substrate treating method of claim 1 , wherein the phase-change layer is formed of a compound comprising at least one of germanium (Ge), antimony (Sb), or tellurium (Te).
10. The substrate treating method of claim 9 , wherein the phase-change layer is formed of a 2-element compound.
11. The substrate treating method of claim 1 , wherein each of the bottom electrode and the top electrode is formed of a nitrogen-containing compound.
12. The substrate treating method of claim 9 , wherein the phase-change layer is formed of a 3-element compound.
13. The substrate treating method of claim 9 , wherein the phase-change layer is formed of a 4-element compound.