Microstructured electrode structures
A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.
1. An electrochemical stack for use in an energy storage device, the stack comprising:
a stacked arrangement of a population of cathode structures having cathodically active material layers, separator layers, and a population of anode structures having microstructured anodically active material layers, the population of anode structures being interdigitated with the population of cathode structures;
wherein each member of the population of anode structures has a height, H A of at least 100 micrometers measured in a direction orthogonal to the reference plane, and a lineal distance, D L , between at least two members of the population of anode structures, measured in a direction parallel to the reference plane, is greater than a maximum value of H A for the population of anode structures,
wherein the direction of stacking of the cathode structures, separator layers, and anode structures is parallel to the reference plane, and a direction of travel of carrier ions between cathodically active material layers of the cathode structures and microstructured anodically active material layers of the anode structures during a charge or discharge process, is generally parallel to the reference plane,
wherein the microstructured anodically active layer of each anode structure comprises a porous silicon layer having a void volume fraction of from 0.15 to 0.75, the thickness T of the porous silicon layer of each member of the population of anode structures as measured in a direction parallel to the reference plane is from 10 to 100 micrometers, and the pores of each porous silicon layer predominantly have major axes that are substantially parallel to the reference plane, and
wherein the number of anode structures in the electrochemical stack is at least 10.
2. The electrochemical stack of claim 1 , wherein the carrier ions are lithium ions.
3. The electrochemical stack of claim 1 , wherein each member of the population of anode structures has a height, H A of at least 100 micrometers but less than 5,000 micrometers.
4. The electrochemical stack of claim 1 , wherein the porous silicon layer has a void volume fraction of from 0.25 to 0.6.
5. The electrochemical stack of claim 1 , wherein the porous silicon layer has a thickness T of from 10 to 80 micrometers.
6. The electrochemical stack of claim 1 , wherein the number of anode structures in the electrochemical stack is at least 20.
7. The electrochemical stack of claim 1 , wherein the number of anode structures in the electrochemical stack is at least 100.
8. The electrochemical stack of claim 1 , wherein each anode structure of the population comprises an anode current collector overlying a surface of the microstructured anodically active material layer.
9. The electrochemical stack of claim 8 , wherein the anode current collector is in contact with the surface of the microstructured anodically active material layer.
10. The electrochemical stack of claim 8 , wherein the anode current collector comprises an ionically permeable conductor layer.
11. The electrochemical stack of claim 10 , wherein the ionically permeable conductor layer comprises a porous metal or metal alloy.
12. The electrochemical stack of claim 11 , wherein the porous metal or metal alloy comprises at least one metal selected from the group consisting of copper, nickel and chromium.
13. The electrochemical stack of claim 12 , wherein the anode current collector comprises porous copper silicide or porous nickel silicide.
14. The electrochemical stack of claim 8 , wherein the microstructured anodically active material layer has a front surface that is substantially perpendicular to the reference plane, and wherein the anode current collector is overlying the front surface.
15. The electrochemical stack of claim 14 , wherein the anode current collector is overlying a top surface of the microstructured anodically active material layer.
16. The electrochemical stack of claim 8 , wherein the anode current collector has a thickness of at least 300 Angstroms.
17. The electrochemical stack of claim 8 , wherein anode current collector is disposed in the stacked arrangement between the anodically active material layer and the separator layer.
18. The electrochemical stack of claim 8 , wherein a ratio of the electrical conductance of the anode current collector to the electrical conductance of the microstructured anodically active material layer is at least 100:1.
19. The electrochemical stack of claim 1 , wherein the porous silicon layer is a microporous material having pore dimensions of less than 10 nm, a wall dimension of less than 10 nm, and a pore depth of from 1 micrometer to 50 micrometers.
20. The electrochemical stack of claim 1 , wherein the porous silicon layer is a mesoporous material having a pore dimension of from 10 nm to 50 nm, a wall dimension of from 10 nm to 50 nm, and a pore depth of from 1 micrometer to 100 micrometers.
21. The electrochemical stack of claim 1 , wherein the porous silicon layer is a macroporous material having a pore dimension of greater than 50 nm, a wall dimension of greater than 50 nm, and a pore depth of from 1 micrometer to 500 micrometers.
22. A secondary battery comprising at least two of the electrochemical stacks of claim 1 , wherein the electrochemical stacks are stacked relative to each other in a direction that is orthogonal to the reference plane.