IP Library › Granted Patent US 9,810,747
Granted Patent B2
US 9,810,747 · App. 14/996,536 · Granted Nov 7, 2017

Magnetic sensor and magnetic encoder

Inventors: Kunihiro Ueda (Tokyo, JP); Yoshiyuki Mizoguchi (Tokyo, JP); Hiroshi Yamazaki (Tokyo, JP); Suguru Watanabe (Tokyo, JP)
Assignee: TDK Corporation
G01R33/09G01R33/0052G01R33/093G01R1/00H01L21/00H01L2221/00
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Quick Facts
Patent No.
US 9,810,747
App. No.
14/996,536
Granted
Nov 7, 2017
Kind
B2
Abstract

A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width W 1 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width W 2 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element. W 1> W 2   (1)

Claims (33)

1. A magnetic encoder, comprising:

a magnetic sensor, and

a scale part that has an absolute signal track where absolute magnetic signals are recorded and an incremental signal track where incremental magnetic signals are recorded, wherein

the magnetic sensor and the scale part are placed to face each other to allow the first magnetoresistive effect element and the absolute signal track to face each other and to allow the second magnetoresistive effect element and the incremental signal track to face each other

the scale part is movable relative to the magnetic sensor,

the magnetic sensor comprises at least a first magnetoresistive effect element and a second magnetoresistive effect element that can detect an external magnetic field,

the first magnetoresistive effect element and the second magnetoresistive effect element each include at least a magnetization direction change layer where a direction of magnetization is changed according to the external magnetic field, respectively,

width W 1 of the magnetization direction change layer in an initial magnetization direction of magnetization direction change layer of the first magnetoresistive effect element and width W 2 of the magnetization direction change layer in an initial magnetization direction of magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below,

sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element to the external magnetic field, and

the magnetic sensor and the scale part are placed to face each other to allow the first magnetoresistive effect element and the absolute signal track to face each other and to allow the second magnetoresistive effect element and the incremental signal track to face each other, and

W1>W2  (1).

2. The magnetic encoder according to claim 1 , wherein an initial magnetization direction of the magnetization direction change layer in the first magnetoresistive effect element and the second magnetoresistive effect element, respectively, is a direction that is orthogonal to a relative movement direction of the scale part.

3. The magnetic encoder according to claim 1 , wherein a ratio W 1 /L 1 of the width W 1 of the magnetization direction change layer of the first magnetoresistive effect element to length L 1 in a direction that is orthogonal to the width W 1 and a ratio W 2 /L 2 of the width W 2 of the magnetization direction change layer of the second magnetoresistive effect element to length L 2 in a direction that is orthogonal to the width W 2 are both 1.2 or less.

4. The magnetic encoder according to claim 1 , wherein a ratio W 1 /L 1 of the width W 1 of the magnetization direction change layer of the first magnetoresistive effect element to length L 1 in a direction that is orthogonal to the width W 1 and a ratio W 2 /L 2 of the width W 2 of the magnetization direction change layer of the second magnetoresistive effect element to length L 2 in a direction that is orthogonal to the width W 2 have a relationship shown in the following formula (2):

W 1/ L 1> W 2/ L 2  (2).

5. The magnetic encoder according to claim 1 , wherein a ratio of the width W 1 of the magnetization direction change layer of the first magnetoresistive effect element to the width W 2 of the magnetization direction change layer of the second magnetoresistive effect element is 1:0.2 to 0.9.

6. The magnetic encoder according to claim 1 , wherein a ratio of the width W 1 of the magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element to the length L 1 in a direction that is orthogonal to the width W 1 is 0.8 or greater.

7. The magnetic encoder according to claim 1 , wherein when the first magnetoresistive effect element and the second magnetoresistive effect element are viewed from an upper side in the lamination direction, a shape of the magnetization direction change layer of the first magnetoresistive effect element and a shape of the magnetization direction change layer of the second magnetoresistive effect element are the same.

8. The magnetic encoder according to claim 1 , wherein the first magnetoresistive effect element and the second magnetoresistive effect element comprise one of a TMR element, a GMR element and an AMR element.

9. The magnetic encoder according to claim 8 , wherein the nonmagnetic intermediate layer is MgOx (X=0.1 to 0.9).

10. The magnetic encoder according to claim 1 , wherein the first magnetoresistive effect element and the second magnetoresistive effect element are formed by laminating a magnetization pinned layer, a nonmagnetic intermediate layer, and the magnetization direction change layer in that order.

11. A magnetic encoder, comprising:

a magnetic sensor, and

a scale part that has an absolute signal track where absolute magnetic signals are recorded and an incremental signal track where incremental magnetic signals are recorded, wherein

the scale part is movable relative to the magnetic sensor,

the magnetic sensor comprises at least a first magnetoresistive effect element and a second magnetoresistive effect element that can detect an external magnetic field,

the first magnetoresistive effect element and the second magnetoresistive effect element each include at least a magnetization direction change layer where a direction of magnetization is changed according to the external magnetic field, respectively,

width W 1 of the magnetization direction change layer in an initial magnetization direction of magnetization direction change layer of the first magnetoresistive effect element, length L 1 in a direction that is orthogonal to the width W 1 , width W 2 of the magnetization direction change layer in an initial magnetization direction of magnetization direction change layer of the second magnetoresistive effect element, and length L 2 in a direction that is orthogonal to the width W 2 have relationships shown by formulas (3) and (4) below,

sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element to the external magnetic field,

the magnetic sensor and the scale part are placed to face each other to allow the first magnetoresistive effect element and the absolute signal track to face each other and to allow the second magnetoresistive effect element and the incremental signal track to face each other,

W1=W2  (3); and

W 1/ L 1> W 2/ L 2  (4).

12. The magnetic encoder according to claim 11 , wherein an initial magnetization direction of the magnetization direction change layer in the first magnetoresistive effect element and the second magnetoresistive effect element, respectively, is a direction that is orthogonal to a relative movement direction of the scale part.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2016
From: UEDA, KUNIHIRO; MIZOGUCHI, YOSHIYUKI; YAMAZAKI, HIROSHI; WATANABE, SUGURU
To: TDK CORPORATION
Reel/Frame 037499/0757 →
Priority Claims (1)
JP 2010-67499 · Mar 27, 2015 · national
Continuity (1)
Related Publication 20160282145A1 · Sep 29, 2016