Photodiode gate dielectric protection layer
The present disclosure relates to a method the present disclosure relates to an integrated chip having an active pixel sensor with a gate dielectric protection layer that reduces damage to an underlying gate dielectric layer during fabrication, and an associated method of formation. In some embodiments, the integrated chip has a photodetector disposed within a substrate, and a gate structure located over the substrate. A gate dielectric protection layer is disposed over the substrate and extends from along a sidewall of the gate structure to a location overlying the photodetector. The gate dielectric protection layer has an upper surface that is vertically below an upper surface of the gate structure.
1. An integrated chip, comprising:
a photodetector disposed within a substrate;
a gate structure located over the substrate;
a gate dielectric protection layer disposed over the substrate and extending from along a sidewall of the gate structure to a location overlying the photodetector, wherein the gate dielectric protection layer comprises a lateral segment and a vertical segment protruding outward from an upper surface of the lateral segment and extending along the sidewall of the gate structure; and
wherein the gate dielectric protection layer has an upper surface that is vertically below an upper surface of the gate structure.
2. The integrated chip of claim 1 , further comprising:
a sidewall spacer arranged along a side of the gate structure, wherein the gate dielectric protection layer continuously extends from below the sidewall spacer to the location over the photodetector.
3. The integrated chip of claim 2 , further comprising:
a contact etch stop layer disposed over the gate dielectric protection layer.
4. The integrated chip of claim 3 , wherein the contact etch stop layer is arranged over the gate dielectric protection layer and the sidewall spacer.
5. The integrated chip of claim 4 , further comprising:
an inter-level dielectric layer disposed over the contact etch stop layer.
6. The integrated chip of claim 1 , wherein the gate dielectric protection layer comprises hafnium oxide, aluminum oxide, titanium oxide, hafnium zirconate, tantalum oxide, hafnium silicate, zirconium oxide, or zirconium silicate.
7. The integrated chip of claim 1 , wherein the gate dielectric protection layer is configured to reduce damage to an underlying layer during fabrication of the integrated chip.
8. The integrated chip of claim 1 , wherein the gate dielectric protection layer is in direct contact with the sidewall of the gate structure.
9. An integrated chip, comprising:
a gate structure disposed over a substrate;
a gate dielectric protection layer disposed over the substrate along a sidewall of the gate structure; and
a sidewall spacer arranged over the gate dielectric protection layer and surrounding the gate structure, wherein the gate dielectric protection layer has a first thickness below the sidewall spacer and a maximum second thickness outside of the sidewall spacer, wherein the first thickness is larger than the maximum second thickness.
10. The integrated chip of claim 9 ,
wherein the first thickness is in a first range of between approximately 50 angstroms and approximately 250 angstroms; and
wherein the maximum second thickness is in a second range of between approximately 10 angstroms and approximately 200 angstroms.
11. The integrated chip of claim 9 , wherein the gate structure comprises a gate dielectric layer and an overlying gate electrode layer, wherein the first thickness of the gate dielectric protection layer is greater than or equal to a thickness of the gate dielectric layer.
12. The integrated chip of claim 9 , further comprising:
a photodetector disposed within the substrate, wherein the gate dielectric protection layer extends from below the sidewall spacer to a location over the photodetector.
13. The integrated chip of claim 9 , further comprising:
a dielectric material comprising a stepped surface arranged between the gate dielectric protection layer and the sidewall spacer.
14. The integrated chip of claim 9 , wherein the sidewall spacer has a stepped sidewall facing the gate structure.
15. The integrated chip of claim 9 , further comprising:
a contact etch stop layer disposed over the gate dielectric protection layer and the sidewall spacer.
16. An integrated chip, comprising:
a gate structure disposed over a substrate;
a gate dielectric protection layer disposed over the substrate along an outermost sidewall of the gate structure; and
a sidewall spacer arranged over the gate dielectric protection layer and contacting a side of the gate structure, wherein the gate dielectric protection layer extends from a first end located outside of the outermost sidewall and below the sidewall spacer to a second end outside of the sidewall spacer.
17. The integrated chip of claim 16 , wherein the gate dielectric protection layer extends from between the sidewall spacer and the substrate to between the sidewall spacer and the gate structure.
18. The integrated chip of claim 16 , further comprising:
a photodetector disposed within the substrate, wherein the gate dielectric protection layer extends from below the sidewall spacer to a location over the photodetector.
19. The integrated chip of claim 16 , further comprising:
a periphery region comprising one or more transistor devices, wherein the gate dielectric protection layer is arranged below sidewall spacers surrounding the one or more transistor devices and has an outermost sidewall aligned with outermost edges of sidewall spacers.
20. The integrated chip of claim 19 , wherein the outermost sidewall of the gate dielectric protection layer arranged below sidewall spacers surrounding the one or more transistor devices laterally contacts a contact etch stop layer.