Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
The present technique aims to provide a solid-state imaging device that reduces shading and color mixing between pixels. The present invention also provides a method of manufacturing the solid-state imaging device. The present technique further relates to a solid-state imaging device that enables provision of an electronic apparatus that uses the solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a substrate, pixels each including a photoelectric conversion unit formed in the substrate, and a color filter layer formed on the light incidence surface side of the substrate. The solid-state imaging device also includes a device isolating portion that is formed to divide the color filter layer and the substrate for the respective pixels, and has a lower refractive index than the refractive indexes of the color filter layer and the substrate.
1. An imaging device comprising:
a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
a plurality of pixels each including a photoelectric conversion unit formed in the semiconductor substrate;
a first insulating film disposed at the first side of the semiconductor substrate, wherein at least a portion of the first insulating film is disposed directly above the photoelectric conversion unit included in the semiconductor substrate; and
a device isolating portion formed to divide the plurality of pixels, the device isolating portion including:
a fixed charge film disposed at the first side of the semiconductor substrate, wherein at least a portion of the fixed charge film extends from the first side of the semiconductor substrate towards the second side of the semiconductor substrate, and
a second insulating film,
wherein,
at least a portion of the device isolating portion adjoins a p-type region in the semiconductor substrate.
2. The imaging device according to claim 1 , wherein the device isolating portion includes a groove portion that extends into the semiconductor substrate, wherein at least a portion of the second insulating film is within the groove portion, and wherein the portion of the fixed charge film is within the groove portion.
3. The imaging device according to claim 2 , wherein the portion of the fixed charge film is between the first insulating film and the photoelectric conversion unit.
4. The imaging device according to claim 3 , wherein the first insulating film includes silicon.
5. The imaging device according to claim 4 , wherein the second insulating film includes silicon.
6. The imaging device according to claim 5 , wherein the fixed charge film includes hafnium.
7. The imaging device according to claim 1 , wherein the p-type region is a p-well region.
8. The imaging device according to claim 1 , further comprising:
a color filter layer provided on the light-incidence side of the semiconductor substrate, wherein the device isolating portion includes a groove portion formed to extend from the color filter layer into the semiconductor substrate, and the second insulating film is within the groove portion.
9. The imaging device according to claim 8 , wherein the portion of the fixed charge film is within the groove portion.
10. The imaging device according to claim 8 , wherein the device isolating portion protrudes from a light-incident side of the color filter layer.
11. The imaging device according to claim 8 , wherein the color filter layer has a thickness of 1 μm or greater.
12. The imaging device according to claim 1 , further comprising a light-scattering structure at a light-incident surface side of the photoelectric conversion unit.
13. The imaging device according to claim 1 , wherein a nontransparent film is buried in a groove portion.
14. The imaging device according to claim 13 , wherein the nontransparent film includes a metal material.
15. The imaging device according to claim 1 , further comprising:
a color filter layer provided on the light incident side of the semiconductor substrate; and
an on-chip lens is formed on the color filter layer.
16. The imaging device according to claim 15 , wherein the device isolating portion is formed with a groove portion extending from the color filter layer into the semiconductor substrate.
17. The imaging device according to claim 1 , further comprising an interconnect layer attached to the semiconductor substrate.
18. The imaging device according to claim 1 , wherein the device isolation portion is formed in a pattern such that each pixel of the plurality of pixels is isolated from one another.
19. The imaging device according to claim 1 , wherein a portion of the device isolating portion is embedded within the p-type region.
20. An apparatus comprising:
an imaging device including:
a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
a plurality of pixels each including a photoelectric conversion unit formed in the semiconductor substrate;
a first insulating film disposed at the first side of the semiconductor substrate, wherein at least a portion of the first insulating film is disposed directly above the photoelectric conversion unit included in the semiconductor substrate; and
a device isolating portion formed to divide the plurality of pixels, the device isolating portion including:
a fixed charge film disposed at the first side of the semiconductor substrate, wherein at least a portion of the fixed charge film extends from the first side of the semiconductor substrate towards the second side of the semiconductor substrate, and
a second insulating film,
wherein,
at least a portion of the device isolating portion adjoins a p-type region in the semiconductor substrate; and
at least one lens disposed above the imaging device.