Silicon carbide powder and method for producing silicon carbide single crystal
A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm 2 /g to 1,000 cm 2 /g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.
1. A method of producing a silicon carbide single crystal, the method comprising:
heating a raw material for producing silicon carbide with an Acheson furnace to obtain a massive silicon carbide;
pulverizing the massive silicon carbide, followed by separation, to obtain a silicon carbide powder that has a Blaine specific surface area of from 250 cm 2 /g to 1,000 cm 2 /g, that has a ratio of a silicon carbide powder having a particle size of from 0.85 mm to 1.70 mm of 90 vol % or more with respect to a total amount of the silicon carbide powder, and that comprises aggregated particles of primary particles having a ratio of particles each having a particle size of 1 μm or more and 1 mm or less of 90 vol % or more; and
growing a silicon carbide single crystal on a silicon carbide seed crystal by a sublimation recrystallization method through use of the silicon carbide powder as a raw material.
2. The method of producing a silicon carbide single crystal according to claim 1 , wherein the silicon carbide powder is a powder formed of a mixture of α-type silicon carbide and β-type silicon carbide.
3. The method of producing a silicon carbide single crystal according to claim 1 , wherein the growing of the silicon carbide single crystal is done by growing the silicon carbide single crystal on the silicon carbide seed crystal provided on an undersurface of a lid of a crucible by accommodating the silicon carbide powder in the crucible so that the silicon carbide powder has a bulk density of from 0.7 g/cm 3 to 1.4 g/cm 3 , followed by heating.
4. The method of producing a silicon carbide single crystal according to claim 1 , wherein the growing of the silicon carbide single crystal is done by growing the silicon carbide single crystal on the silicon carbide seed crystal provided on an undersurface of a lid of a crucible by accommodating the silicon carbide powder in the crucible so that the silicon carbide powder has a thermal conductivity of from 0.05 W/m·K to 0.15 W/m·K, followed by heating.
5. The method of producing a silicon carbide single crystal according to claim 3 , wherein the growing of the silicon carbide single crystal is done by growing the silicon carbide single crystal on the silicon carbide seed crystal provided on an undersurface of a lid of a crucible by accommodating the silicon carbide powder in the crucible so that the silicon carbide powder has a thermal conductivity of from 0.05 W/m·K to 0.15 W/m·K, followed by heating.
6. The method of producing a silicon carbide single crystal according to claim 1 , wherein the pulverization of the massive silicon carbide is done with a ball mill, and the separation is done with a sieve.
7. The method of producing a silicon carbide single crystal according to claim 1 , wherein the raw material for producing silicon carbide is prepared by mixing a siliceous raw material and a carbonaceous raw material so that the mixture mole ratio (C/SiO 2 ) between the carbonaceous raw material and the siliceous raw material in the raw material for producing silicon carbide is from 2.5 to 4.0.
8. The method of producing a silicon carbide single crystal according to claim 7 , wherein
the siliceous raw material is a non-crystalline silica, and
the carbonaceous raw material is a carbon black.
9. The method of producing a silicon carbide single crystal according to claim 8 , wherein the non-crystalline silica is a silica gel having an average particle diameter of 3 mm or less, and the carbon black is a carbon black having an average particle diameter of from 30 nm to 500 nm.
10. The method of producing a silicon carbide single crystal according to claim 1 , wherein
the massive silicon carbide obtained in the heating of the raw material for producing silicon carbide with an Acheson furnace is a silicon carbide lump.