Thin film capacitor
A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by A y BO 3 , an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of A y BO 3 .
1. A thin film capacitor comprising: a base material; a dielectric layer provided on the base material; and an upper electrode layer provided on the dielectric layer, wherein
the dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer,
the columnar crystals have a perovskite crystal structure represented by A y BO 3 ,
an element A is at least one of Ba, Ca, Sr, and Pb,
an element B is at least one of Ti, Zr, Sn, and Hf,
y≦0.995 is satisfied, and
the dielectric layer contains 0.3 to 2.5 mol of Al per 100 mol of A y BO 3 .
2. The thin film capacitor according to claim 1 , wherein the dielectric layer further contains 0.05 to 0.45 mol of Mn per 100 mol of A y BO 3 .
3. The thin film capacitor according to claim 1 , wherein the dielectric layer further contains at least one of V, Nb, and Ta, and total content of V, Nb, and Ta is 0.05 to 0.5 mol per 100 mol of A y BO 3 .
4. The thin film capacitor according to claim 1 , wherein the dielectric layer further contains at least one of rare-earth elements, and total content of the rare-earth elements is 0.05 to 0.3 mol per 100 mol of A y BO 3 .
5. The thin film capacitor according to claim 1 , wherein 0.97≦y≦0.995 holds.
6. The thin film capacitor according to claim 1 , wherein the base material is a metal foil that contains Ni as a principal component.