Semiconductor unit and test method
A semiconductor unit includes: a substrate made of a semiconductor; and a device group formed on the substrate and configured of a plurality of first capacitors, in which the device group includes one or a plurality of first conductive layers and a second conductive layer, the first and second conductive layers provided to be superimposed on each other in part or as a whole with an insulating film in between, the first conductive layer includes an edge extending along one direction, the second conductive layer includes a plurality of sub-conductive layers having substantially same shapes as one another, and the plurality of sub-conductive layers are arranged in relatively different positions with respect to the edge of the first conductive layer.
1. A semiconductor unit comprising:
a substrate made of a semiconductor;
a device group on the substrate and comprised of a plurality of first capacitors;
a second capacitor;
a detection circuit; and
a correction circuit,
wherein
the device group includes a first conductive layer and a second conductive layer, the first and second conductive layers overlapping each other in part or in whole with an insulating film in between,
the first conductive layer includes an edge extending along a first direction,
the second conductive layer includes a plurality of substantially same-shaped sub-conductive layers which are arrayed along the first direction,
the plurality of sub-conductive layers are electrically isolated from one another and are arranged in relatively different positions with respect to the edge of the first conductive layer along a second direction orthogonal to the first direction,
the detection circuit is configured to detect a misalignment amount between the first and second conductive layers, based on a capacitance in the device group, and
the correction circuit is configured to correct a capacitance of the second capacitor based on the misalignment amount detected by the detection circuit.
2. The semiconductor unit according to claim 1 , wherein, in the device group, the first conductive layer is provided for the plurality of sub-conductive layers, or a plurality of electrically connected first conductive layers are provided for the plurality of sub-conductive layers.
3. The semiconductor unit according to claim 1 , wherein the plurality of sub-conductive layers are arranged at positions shifted stepwise along the second direction.
4. The semiconductor unit according to claim 1 , wherein the plurality of sub-conductive layers are rectangular, semicircular, or triangular shaped in plan view.
5. The semiconductor unit according to claim 1 , wherein the detection circuit detects the misalignment amount by a relative comparison of respective capacitances of the plurality of first capacitors in the device group.
6. The semiconductor unit according to claim 1 , wherein the correction circuit includes
a plurality of third capacitors connected in parallel to the second capacitor, and
one or more of the plurality of third capacitors are electrically isolated by correction based on the alignment amount.
7. The semiconductor unit of claim 1 , wherein the detection circuit is configured to detect the misalignment amount by arithmetic processing using a difference between capacitances of capacitors selected from the plurality of first capacitors and a sum of the capacitances of the selected capacitors.
8. The semiconductor unit according to claim 1 comprising a plurality of electrically-connected first conductive layers, wherein:
the plurality of the first conductive layers are arrayed along the second direction, and
the sub-conductive layer are arranged overlapping respective parts of the respective first conductive layers.
9. A semiconductor unit comprising:
a substrate made of a semiconductor;
a device group on the substrate and comprised of a plurality of first capacitors;
a second capacitor;
a detection circuit; and
a correction circuit,
wherein
the device group includes a first conductive layer and a second conductive layer, the first and second conductive layers overlapping each other in part or in whole with an insulating film in between,
the second conductive layer includes a plurality of substantially same-shaped sub-conductive layers which are arranged along two orthogonal axes,
the plurality of sub-conductive layers are electrically isolated from one another and are arranged overlapping different portions of the first layer,
the detection circuit is configured to detect a misalignment amount between the first and second conductive layers, based on a capacitance in the device group, and
the correction circuit is configured to correct a capacitance of the second capacitor based on the misalignment amount detected by the detection circuit.
10. The semiconductor unit according to claim 9 , wherein the detection circuit is configured to perform arithmetic processing including capacitances of the plurality of first capacitors and a design value of a width in one or more axis directions in each of the first capacitors as parameters.
11. A method comprising:
providing a substrate made of a semiconductor, a device group on the substrate and comprised of a plurality of first capacitors, a second capacitor on the substrate, a detection circuit, and a correction circuit, the device group includes a first conductive layer and a second conductive layer, the first and second conductive layers overlapping each other in part or in whole with an insulating film in between, the first conductive layer including an edge extending along a first direction, the second conductive layer including a plurality of substantially same-shaped sub-conductive layers which are arrayed along the first direction, the plurality of sub-conductive layers being electrically isolated from one another and arranged in relatively different positions with respect to the edge of the first conductive layer along a second direction orthogonal to the first direction;
detecting a relative misalignment amount between the first and second conductive layers, based on a capacitance in the device group;
performing defect judgment on each of regions on the substrate, based on the detected misalignment amount; and
correcting a capacitance of the second capacitor based on the misalignment amount detected by the detection circuit.
12. The method according to claim 11 , wherein, in detecting the misalignment amount, the misalignment amount is detected by a relative comparison of respective capacitances of the plurality of first capacitors in the device group.
13. The method according to claim 11 , further comprising forming a map in which a position of a defect caused by misalignment is recorded corresponding to a region that is judged as a defective region of the regions on the substrate.
14. The method of claim 11 , wherein the misalignment amount is detected by arithmetic processing using a difference between capacitances of capacitors selected from the plurality of first capacitors and a sum of the capacitances of the selected capacitors.