Semiconductor package manufacturing method
The present disclosure provides a manufacturing method of a semiconductor packaging, including forming a redistribution layer (RDL) on a carrier, defining an active portion and a dummy portion of the RDL, and placing a semiconductor die over the dummy portion of the RDL. The present disclosure also provides a manufacturing method of a package-on-package (PoP) semiconductor structure, including forming a first redistribution layer (RDL) on a polymer-based layer of a carrier, defining an active portion and a dummy portion of the first RDL, placing a semiconductor die over the dummy portion of the first RDL, a back side of the semiconductor die facing the first RDL, forming a second RDL over a front side of the semiconductor die, the front side having at least one contact pad, and attaching a semiconductor package at the back side of the semiconductor die.
1. A method of manufacturing a semiconductor package, comprising:
forming a redistribution layer (RDL) on a carrier;
defining an active portion and a dummy portion of the RDL by forming a through package via (TPV) at the active portion after forming the RDL; and
placing a semiconductor die over the dummy portion of the RDL.
2. The method in claim 1 , wherein the dummy portion of the first RDL is electrically isolated from any component of the semiconductor structure.
3. The method in claim 1 , wherein the forming the TPV comprises plating the TPV on the active portion of the RDL.
4. The method in claim 1 , wherein the placing a semiconductor die at least over the dummy portion of the RDL comprises facing a back side of the semiconductor die to the dummy portion of the RDL and positioning the semiconductor die at the same level with the TPV.
5. The method in claim 1 , wherein the semiconductor die is over the active portion of the RDL.
6. The method in claim 1 , further comprising forming an adhesive layer between a back side of the semiconductor die and the dummy portion of the RDL.
7. The method in claim 1 , further comprising forming a molding compound encapsulating the RDL and the semiconductor die.
8. A method of manufacturing a semiconductor package, comprising:
forming a first redistribution layer (RDL) on a carrier;
defining an active portion and a dummy portion of the first RDL by forming a through package via (TPV) at the active portion after forming the first RDL;
placing a semiconductor die over the dummy portion of the first RDL, a back side of the semiconductor die facing the first RDL; and
forming a molding compound, encapsulating the first RDL and the semiconductor die,
wherein one end of the TPV electrically connects a front side of the semiconductor die and the other end of the TPV electrically connects the first RDL, the front side being opposite to the back side.
9. The method of claim 8 , wherein the active portion and the dummy portion are attached to a first side of a polymer-based layer.
10. The method of claim 9 , further comprising disposing a semiconductor package at a second side of the polymer-based layer, the semiconductor package being electrically coupled to the semiconductor die via a conductive plug passing through the polymer-based layer.
11. The method of claim 10 , further comprising applying underfill between the polymer-based layer and the semiconductor package.
12. The method of claim 8 , wherein the placing the semiconductor die over the dummy portion of the first RDL comprises applying an adhesive layer over the first RDL.
13. The method of claim 8 , further comprising forming a second RDL at the front side of the semiconductor die, the second RDL being electrically coupled to the TPV.
14. The method of claim 8 , wherein the forming the first RDL comprises patterning a seed layer over the carrier.
15. A method of manufacturing a package-on-package (PoP) semiconductor structure, comprising:
forming a first redistribution layer (RDL) on a polymer-based layer of a carrier;
defining an active portion and a dummy portion of the first RDL;
placing a semiconductor die over the dummy portion of the first RDL, a back side of the semiconductor die facing the first RDL;
forming a second RDL over a front side of the semiconductor die, the front side having at least one contact pad; and
attaching a semiconductor package at the back side of the semiconductor die.
16. The method of claim 15 , further comprising forming a through package via (TPV) connecting the second RDL and the active portion of the first RDL.
17. The method of claim 15 , further comprising:
de-bonding the carrier from the first RDL;
laser-drilling a hole in the polymer-based layer; and
forming a conductive plug in the hole.
18. The method of claim 15 , further comprising simulating the semiconductor die prior to attaching the semiconductor package.
19. The method of claim 15 , further comprising forming a ball grid array at the second RDL.
20. The method of claim 15 , wherein a projection area of the semiconductor die is greater than a projection area of the dummy portion of the first RDL.