Ferroelectric device and method of its manufacture
A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.
1. A method of making a ferroelectric device having a semiconductor on which is had a gate stack comprising layers of an insulator, a first ferroelectric and a conductor built up in this order or a gate stack comprising layers of a first ferroelectric and a conductor built up in this order, the method comprising: the step in which layers of a second ferroelectric and an insulator that has a dielectric constant of not more than 10 are built up in this order so that the second ferroelectric may lie in contact with at least the first ferroelectric on a side face of said gate stack; and the step of thereafter heat-treating said gate stack.
2. A method of making a ferroelectric device having a semiconductor on which is formed a gate stack comprising layers of an insulator, a first ferroelectric and a conductor built up in this order or a gate stack comprising layers of a first ferroelectric and a conductor built up in this order, the method comprising the step in which a layer of a second ferroelectric mainly constituted of an oxide of strontium, calcium, bismuth and tantalum is formed by a metal organic chemical vapor deposition process so as to lie in contact with at least the first ferroelectric on a side face of said gate stack.
3. A method of making a ferroelectric device as set forth in claim 1 , wherein the layer of said second ferroelectric has a thickness of not more than 100 nanometers.
4. A method of making a ferroelectric device as set forth in claim 3 , wherein the layer of said second ferroelectric has a thickness of not more than 10 nanometers.
5. A method of making a ferroelectric device as set forth in claim 1 , wherein said second ferroelectric is made by a metal organic chemical vapor deposition process which comprises: preparing a raw material liquid solution having complex compounds each dissolved in a solvent, the complex compounds containing strontium, calcium, bismuth and tantalum; dispersing the raw material liquid solution into a carrier gas to form a raw material gaseous medium in a state of gas and liquid two phases; introducing the raw material gaseous medium while in the state of gas and liquid two phases into a vaporizing chamber to form a vapor thereof; and introducing the vapor into a film forming chamber.
6. A method of making a ferroelectric device as set forth in claim 1 , wherein of said layer of the second ferroelectric formed, a portion on the side face of said gate stack is left and a portion on a non-gate surface area of said semiconductor and other than that on which said gate stack is formed is removed in which state a source and a drain region are thereafter formed on the surface of said semiconductor.
7. A method of making a ferroelectric device as set forth in claim 6 , wherein removal of said portion of the layer of the second ferroelectric is effected without masking or masklessly.
8. A method of making a ferroelectric device as set forth in claim 6 wherein removal of said portion of said layer of the second ferroelectric on the semiconductor surface area is effected by an RIE technique.
9. A method of making a ferroelectric device as set forth in claim 1 , wherein a said complex compound that contains calcium is:
Ca[Ta(OC 2 H 5 ) 5 (OC 2 H 4 OCH 3 )] 2 or Ca(C 11 H 19 O 2 ) 2 .
10. A method of making a ferroelectric device as set forth in claim 2 , wherein first ferroelectric is mainly composed of an oxide of strontium, calcium, bismuth and tantalum and has a proportion of strontium to calcium of 1−x:x wherein x is not more than 0.5.
11. A method of making a ferroelectric device as set forth in claim 1 , wherein said second ferroelectric is mainly composed of an oxide of strontium, calcium, bismuth and tantalum and has a proportion of strontium to calcium of 1−x:x wherein x is not more than 0.5.
12. A method of making a ferroelectric device as set forth in claim 1 , wherein the device has a gate length of not more than 200 nm.
13. A ferroelectric device, comprising a semiconductor on which is had a gate stack comprising layers of an insulator, a first ferroelectric and a conductor built up in this order or a gate stack comprising a first ferroelectric and a conductor built up in this order; and that layers of a second ferroelectric and an insulator that has a dielectric constant of not more than 10 are built up in this order so that the second ferroelectric may lie in contact with at least the first ferroelectric on a side face of said gate stack, the said gate stack formed with said layers of the second ferroelectric and the insulator that has a dielectric constant of not more than 10 being thereafter heat-treated.
14. A ferroelectric device, comprising a semiconductor on which is had a gate stack comprising layers of an insulator, a first ferroelectric and a conductor built up in this order or a gate stack comprising layers of a first ferroelectric and a conductor built up in this order; that a layer of a second ferroelectric is built up so as to lie in contact with at least the first ferroelectric on a side face of said gate stack; and that the layer of said second ferroelectric is mainly constituted of an oxide of strontium, calcium, bismuth and tantalum, said oxide being made by a metal organic chemical vapor deposition technique.
15. A ferroelectric device as set forth in claim 13 wherein of the layer of said second ferroelectric formed, a portion on the side face of said gate stack is left and a portion on a non-gate surface area of said semiconductor and other than that on which said gate stack is formed is removed in which state a source and a drain region are thereafter formed on the surface of said semiconductor.
16. A ferroelectric device as set forth in claim 15 , wherein it is formed with a gate electrode in a self-alignment manner by ion implantation effected with a mask served by said gate stack and said second ferroelectric layer formed on said side face.
17. A ferroelectric device as set forth in claim 13 , wherein the surface of the semiconductor has no oxide thereof substantially included therein.
18. A ferroelectric device as set forth in claim 13 , wherein said first ferroelectric has no impurity substantially included therein that is to be implanted into the source or drain electrode.
19. A ferroelectric device as set forth in claim 13 , wherein the layer of said second ferroelectric has a thickness of not more than 100 nanometers.
20. A ferroelectric device as set forth in claim 19 , wherein the layer of said second ferroelectric has a thickness of not more than 10 nanometers.
21. A ferroelectric device as set forth in claim 13 , wherein said second ferroelectric is made in a metal organic chemical vapor deposition technique which comprises: preparing a raw material liquid solution having complex compounds each dissolved in a solvent, the complex compounds containing strontium, calcium, bismuth and tantalum; dispersing the raw material liquid solution into a carrier gas to form a raw material gaseous medium in a state of gas and liquid two phases; introducing the raw material gaseous medium while in the state of gas and liquid two phases into a vaporizing chamber to form a vapor thereof; and introducing the vapor into a film forming chamber.
22. A ferroelectric device as set forth in claim 21 , wherein said complex containing calcium is Ca [Ta(OC 2 H 5 ) 5 (OC 2 H 4 OCH 3 )] 2 or Ca(C 11 H 19 O 2 ) 2 .
23. A ferroelectric device as set forth in claim 13 , wherein said first ferroelectric is mainly composed of an oxide of strontium, calcium, bismuth and tantalum and has a proportion of strontium to calcium of 1−x:x wherein x is not more than 0.5.
24. A ferroelectric device as set forth in claim 14 , wherein said first ferroelectric is mainly composed of an oxide of strontium, calcium, bismuth and tantalum and has a proportion of strontium to calcium of 1−x:x wherein x is not more than 0.5.
25. A ferroelectric device as set forth in claim 13 , wherein the device has a gate length of not more than 200 nm.