Back-illuminated sensor with boron layer

1. A system for inspecting a sample, the system comprising:

first and second illumination relays respectively configured to direct light generated by an illumination source onto the sample;

image relay optics configured to direct first light outputs from the sample to a first channel image mode relay when the first light outputs correspond to said light directed by the first channel illumination relay, and configured to direct second light outputs from the sample to a second channel image mode relay when the second light outputs correspond to said light directed by the second channel illumination relay; and

an image sensor configured to receive said first light outputs from the first channel image mode relay and said second light outputs from the second channel image mode relay, the sensor including:

an image region including pixels disposed in a two-dimensional array on an epitaxial silicon membrane, the epitaxial silicon membrane including circuit elements formed on a first surface of the epitaxial silicon membrane and a pure boron layer disposed on an opposing second surface of the epitaxial silicon membrane,

first readout circuits disposed on a first side of said image region, and

second readout circuits disposed on a second side of said image region,

wherein the system is configured such that the first readout circuit reads out charges from the pixels that correspond to the first light outputs directed onto the image region by the first channel image mode relay, and such that the second readout circuit reads out charges from the pixels that correspond to the second light outputs directed onto the image region by the second channel image mode relay.

2. The inspection system of claim 1 ,

wherein said first illumination relay and said first channel image mode relay are configured such that the first light output directed by the image relay optics to the first channel image mode relay comprises a first portion of said light that is reflected from the sample, and

wherein said second illumination relay and said second channel image mode relay are configured such that the second light output directed by the image relay optics to the second channel image mode relay comprises a second portion of said light that is transmitted through the sample.

3. The inspection system of claim 1 ,

wherein the image region includes a first plurality of said pixels disposed in a first side region and second plurality of said pixels disposed in a second side region, and

wherein the image sensor is configured such that the first readout circuit reads out charges first plurality of said pixels while the second readout circuit reads out charges second plurality of said pixels.

4. The inspection system of claim 1 , wherein each pixel of the image sensor comprises a p-type silicon layer and n-type silicon layer, and wherein said circuit elements are formed on the n-type silicon layer.

5. An inspection system for inspecting a sample, the inspection system comprising:

an illumination source configured to generate light;

optics including an objective lens, the optics configured to direct and focus said light generated by the illumination source onto the sample;

a detector configured to receive portions of the light redirected from the sample,

wherein the optics are further configured to collect, direct, and focus the redirected light onto the detector, and

wherein the detector includes an array of image sensors, at least one image sensor in the array of image sensors including a semiconductor membrane comprising an epitaxial layer and including opposing first and second surfaces, the semiconductor membrane including circuit elements formed on the first surface of the semiconductor membrane and a pure boron layer formed on the second surface of the semiconductor membrane such that a portion of the boron is diffused into the epitaxial layer through the second surface.

6. The inspection system of claim 5 ,

wherein the array of image sensors include a first row of space-apart image sensors and a second row of spaced-apart image sensors, and

wherein said first row is offset relative to said second row such that a first image sensor of said first row is aligned with a space separating second and third image sensors of the second row.

7. The inspection system of claim 6 , wherein a width of the first sensor is equal to or greater than the space separating the second and third image sensors.

8. The inspection system of claim 5 , wherein the at least one image sensor further comprises an anti-reflection coating deposited on the boron layer.

9. The inspection system of claim 5 , wherein the illumination source comprises a laser-pumped plasma light source.

10. An inspection system comprising:

an illumination source configured to generate light;

optics including an objective lens, the optics configured to direct and focus said light generated by the illumination source onto a line-shaped region of the sample;

a detector configured to receive portions of the light redirected from the line-shaped region of the sample,

wherein the optics are further configured to collect, direct, and focus the redirected light onto the detector, and

wherein the detector includes an image sensor, the image sensor including a semiconductor membrane comprising an epitaxial layer having opposing first and second surfaces, the semiconductor membrane including circuit elements formed on the first surface of the epitaxial layer and a pure boron layer formed on the second surface of the epitaxial layer such that a portion of the boron is diffused into the epitaxial layer through the second surface.

11. The inspection system of claim 10 , wherein the image sensor comprises a line sensor.

12. The inspection system of claim 11 , wherein the line sensor comprises an electron-bombarded line sensor.

13. An inspection system comprising:

an illumination source configured to generate light;

optics including an objective lens, the optics configured to direct and focus said light generated by the illumination source onto multiple spot-type regions on the sample;

a detector configured to receive portions of the light redirected from the spot-type regions of the sample,

wherein the optics are further configured to collect, direct, and focus the redirected light onto the detector, and

wherein the detector includes an image sensor, the image sensor including a semiconductor membrane comprising an epitaxial layer and including opposing first and second surfaces, the semiconductor membrane including circuit elements formed on the first surface and a pure boron layer formed on the second surface such that a portion of the boron is diffused into the epitaxial layer through the second surface.

14. The inspection system of claim 13 , wherein the image sensor comprises a two-dimensional array sensor.

15. The inspection system of claim 13 , wherein the image sensor comprises an electron-bombarded two-dimensional array sensor.