Method of growing III-V semiconductor films for tandem solar cells
A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.
1. A method of growing a III-V semiconductor compound film for a semiconductor device comprising:
depositing a textured oxide buffer layer on a glass or organic substrate, and
depositing a metal-inorganic film from a eutectic alloy on said buffer layer, said metal being a component of a III-V compound and forming a layer on said inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.
2. The method of claim 1 , wherein said III-V compound comprises one of InP, InGaP or InGaN.
3. The method of claim 1 , wherein said metal comprises one of In or Ga.
4. The method of claim 1 , wherein said organic substrate is flexible plastic.
5. The method of claim 1 , wherein said organic substrate is flexible polyimide.
6. The method of claim 1 , wherein said additional elements are added by electron beam evaporation.
7. The method of claim 1 , wherein forming a thin-film with said metal, said thin film serving as an electron selector layer (ESL).
8. The method of claim 1 , further comprising oxidizing said metal forming an ESL.
9. The method of claim 1 , wherein said oxidized metal is InO 2 .
10. The method of claim 1 , wherein the glass is flexible.
11. The method of claim 1 , further comprising depositing additional layers forming a multi junction solar cell.
12. The method of claim 1 , wherein the device is a light emitting diode.
13. The method of claim 1 , wherein the device is a transistor.
14. A method of growing a III-V semiconductor compound film for a semiconductor device comprising:
depositing a metal-inorganic film from a eutectic alloy directly on an organic substrate, said metal being a component of a III-V compound and forming a layer on said inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.