FETS and methods of forming FETs
An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
1. A method comprising:
patterning a substrate to form a raised portion of the substrate, the raised portion of the substrate having a first top surface higher than a second top surface of the substrate;
patterning the raised portion to form fins on the raised portion of the substrate, the raised portion having recesses between adjacent fins, the bottommost surfaces of the recesses being higher than the second top surface of the substrate;
forming an isolation region surrounding the fins and the raised portion, a first portion of the isolation region being in the recesses of the raised portion of the substrate between adjacent fins;
forming a gate structure over the fins; and
forming source/drain regions on opposing sides of the gate structure, at least one of the source/drain regions having an air gap separating the at least one source/drain region from the first portion of the isolation region.
2. The method of claim 1 further comprising:
forming a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being between the first portion of the isolation region and the air gap.
3. The method of claim 1 , wherein the at least one source/drain region has a substantially planar top surface.
4. The method of claim 1 , wherein the at least one source/drain region has a non-planar top surface.
5. The method of claim 1 , wherein the forming the source/drain regions further comprises:
recessing the fins outside of the gate structure to have top surfaces below a top surface of the isolation region; and
epitaxially growing the source/drain regions from the recessed fins on opposing sides of the gate structures.
6. The method of claim 5 , wherein the epitaxially growing the source/drain regions from the fins further comprises:
epitaxially growing a buffer layer on the fins, the buffer layer having a first dopant concentration;
epitaxially growing a stressor layer on the buffer layer, the stressor layer having a second dopant concentration, the second dopant concentration being larger than the first dopant concentration; and
epitaxially growing a capping layer on the stressor layer, the capping layer having a third dopant concentration, the third dopant concentration being less than the second dopant concentration.
7. A method comprising:
forming a first fin over a substrate;
forming an isolation region surrounding the first fin;
forming a first gate structure over the first fin;
forming a gate seal spacer along sidewalls of the first gate structure and extending across a top surface of the isolation region;
recessing the first fin outside of the first gate structure to have a top surface below a top surface of the isolation region, wherein after the recessing, a first portion of the gate seal spacer extends across a top surface of the isolation region outside of the gate structure, the first portion of the gate seal spacer having a top surface above a top surface of the recessed first fin; and
epitaxially growing a first source/drain region from the recessed first fin outside of the first gate structure, the first portion of the gate seal spacer being directly between the first source drain region and the top surface of the isolation region in a direction perpendicular to a major surface of the substrate.
8. The method of claim 7 , wherein the first source/drain region has a non-planar top surface.
9. The method of claim 7 further comprising:
forming a second fin over the substrate, the second fin being adjacent the first fin, the isolation region surrounding the second fin;
forming a second gate structure over the second fin;
recessing the second fin outside of the second gate structure to have a top surface below a top surface of the isolation region; and
epitaxially growing a second source/drain region from the recessed second fin outside of the second gate structure.
10. The method of claim 9 , wherein the isolation region constrains the epitaxial growth of the second source/drain region such that the second source/drain region does not merge with the first source/drain region.
11. The method of claim 9 , wherein the first source/drain region and the second source/drain region merge together to form a continuous source/drain region, the isolation region forming an air gap between a top surface of the isolation region and the continuous source/drain region.
12. The method of claim 11 further comprising:
forming a gate seal spacer on sidewalls of the first gate structure and the second gate structure, a first portion of the gate seal spacer being on the isolation region, the first portion of the gate seal spacer being between the air gap and the isolation region.
13. A method comprising:
forming a first fin and a second fin over a substrate, the second fin being adjacent the first fin;
forming an isolation region surrounding the first fin and the second fin;
forming a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin;
recessing the first fin and the second fin outside of the gate structure to have top surfaces below a top surface of the isolation region; and
epitaxially growing source/drain regions from the recessed first and second fins on opposing sides of the gate structure, the source/drain regions merging between the recessed first and second fins to form continuous source/drain regions on each side of the first and second fins, an air gap interposed between at least one of the continuous source/drain regions and a top surface of the substrate.
14. The method of claim 13 , wherein a first portion of the isolation region is interposed between the top surface of the substrate and the air gap.
15. The method of claim 14 further comprising:
forming a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being interposed between the first portion of the isolation region and the air gap.
16. The method of claim 13 , wherein the at least one source/drain region has a substantially planar top surface.
17. The method of claim 13 , wherein the at least one source/drain region has a non-planar top surface.
18. The method of claim 13 , wherein epitaxially growing the source/drain regions from the recessed first and second fins comprises:
epitaxially growing a buffer layer from the recessed first and second fins, the buffer layer having a first dopant concentration;
epitaxially growing a stressor layer from the buffer layer, the stressor layer having a second dopant concentration, the second dopant concentration being larger than the first dopant concentration; and
epitaxially growing a capping layer from stressor layer, the capping layer having a third dopant concentration, the third dopant concentration being less than the second dopant concentration.
19. The method of claim 13 further comprising:
patterning the substrate to form a raised portion of the substrate; and
forming the first fin and the second fin on the raised portion of the substrate.
20. The method of claim 19 , wherein a first portion of the isolation region is on a top surface of the raised portion of the substrate between the first fin and the second fin.