Semiconductor device, display device, display module, electronic device, oxide, and manufacturing method of oxide
The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.
1. A manufacturing method of an oxide,
wherein the manufacturing method is a sputtering method using a deposition chamber, a pair of targets positioned in the deposition chamber, and magnets for making a space between the pair of targets a magnetic field space,
wherein the pair of targets comprises indium, zinc, an element M, and oxygen,
wherein the element M is at least any one of aluminum, gallium, yttrium, and tin, and
wherein the manufacturing method comprising the steps of:
placing a substrate between the pair of targets;
supplying a sputtering gas comprising oxygen or a rare gas to the deposition chamber;
adjusting pressure in the deposition chamber to higher than or equal to 0.005 Pa and lower than or equal to 0.09 Pa;
supplying a sputtering power to the pair of targets to generate plasma;
sputtering the pair of targets using ions in the plasma; and
depositing particles sputtered from the pair of targets on the substrate.
2. The manufacturing method of an oxide, according to claim 1 , wherein the substrate is placed in a positive column of the plasma.
3. The manufacturing method of an oxide, according to claim 1 , wherein L 1 and L 2 are each longer than or equal to 10 mm and shorter than or equal to 200 mm, where L 1 is a horizontal distance from one of the pair of targets to the substrate and L 2 is a horizontal distance from the other of the pair of targets to the substrate.
4. The manufacturing method of an oxide, according to claim 1 , wherein temperature of the substrate during deposition is higher than or equal to 10° C. and lower than 100° C.
5. The manufacturing method of an oxide, according to claim 1 , wherein temperature of the substrate during deposition is higher than or equal to 100° C. and lower than or equal to 500° C.
6. The manufacturing method of an oxide, according to claim 1 , wherein the oxide is formed over a surface of an amorphous structure.
7. The manufacturing method of an oxide, according to claim 1 , wherein lattice spacing in the oxide is longer than or equal to 0.27 nm and shorter than or equal to 0.28 nm in a normal direction of the substrate.
8. A manufacturing method of an oxide,
wherein the manufacturing method is a sputtering method using a deposition chamber, a pair of targets positioned in the deposition chamber, and magnets for making a space between the pair of targets a magnetic field space,
wherein the pair of targets comprises indium, zinc, an element M, and oxygen,
wherein the element M is at least any one of aluminum, gallium, yttrium, and tin, and
wherein the manufacturing method comprising the steps of:
placing a substrate beside the space between the pair of targets;
supplying a sputtering gas comprising oxygen or a rare gas to the deposition chamber;
adjusting pressure in the deposition chamber to higher than or equal to 0.005 Pa and lower than or equal to 0.09 Pa;
supplying a sputtering power to the pair of targets to generate plasma;
sputtering the pair of targets using ions in the plasma; and
depositing particles sputtered from the pair of targets on the substrate.
9. The manufacturing method of an oxide, according to claim 8 , wherein the substrate is placed in a positive column of the plasma.
10. The manufacturing method of an oxide, according to claim 8 , wherein L 1 and L 2 are each longer than or equal to 10 mm and shorter than or equal to 200 mm, where L 1 is a horizontal distance from one of the pair of targets to the substrate and L 2 is a horizontal distance from the other of the pair of targets to the substrate.
11. The manufacturing method of an oxide, according to claim 8 , wherein temperature of the substrate during deposition is higher than or equal to 10° C. and lower than 100° C.
12. The manufacturing method of an oxide, according to claim 8 , wherein temperature of the substrate during deposition is higher than or equal to 100° C. and lower than or equal to 500° C.
13. The manufacturing method of an oxide, according to claim 8 , wherein the oxide is formed over a surface of an amorphous structure.
14. The manufacturing method of an oxide, according to claim 8 , wherein lattice spacing in the oxide is longer than or equal to 0.27 nm and shorter than or equal to 0.28 nm in a normal direction of the substrate.