P-compensated and P-doped superlattice infrared detectors
Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.
1. An infrared photodetector absorber material comprising a p-doped Ga-free superlattice material formed of alternating layers of InAsSb and InAs, and having a cutoff wavelength of from 8 to 13 μm, wherein the superlattice material is doped with Be in a concentration of from 1×10 15 to 5×10 15 cm −3 to compensate for residual n-type carriers.
2. The infrared photodetector absorber material according to claim 1 , wherein the Be is incorporated into the superlattice material in a concentration of about 2.5×10 15 cm −3 .
3. The infrared photodetector absorber material according to claim 1 , wherein Sb is in a concentration of around 59%.
4. An infrared photodetector comprising:
a substrate formed of a substrate material;
an infrared detector structure disposed atop the substrate and at least comprising at least one Ga-free absorber superlattice formed of alternating layers of InAsSb and InAs, and having a cutoff wavelength of from 8 to 13 μm, wherein the superlattice material is doped with Be in a concentration of from 1×10 15 to 5×10 15 cm −3 to compensate for residual n-type carriers.
5. The infrared photodetector according to claim 4 , wherein the Be is incorporated into the superlattice material in a concentration of about 2.5×10 15 cm −3 .
6. The infrared photodetector according to claim 4 , wherein Sb is in a concentration of around 59%.
7. The infrared photodetector according to claim 4 , further comprising one or more structures selected from the group consisting of contact layers, unipolar barrier layers, and graded transitional structures.
8. The infrared photodetector according to claim 7 , further comprising at least one graded transitional structure disposed between at least two other layers of the photodetector to align at least one portion of the bandgap of the photodetector.
9. The infrared detector of claim 4 , wherein the substrate is a material selected from the group consisting of Si, GaAs, Ge, InAs, GaP, and InP.
10. The infrared detector of claim 4 , wherein the detector has a detector has a structure selected from the group consisting of pin, pBp, nBn, homojunction, heterostructure, and double heterostructure.
11. An infrared photodetector comprising:
a substrate formed of a substrate material;
an infrared detector structure disposed atop the substrate and at least comprising at least one Ga-free absorber superlattice formed of alternating layers of InAsSb and InAs having a cutoff wavelength of from 8 to 13 μm, wherein the superlattice material is p-type doped with Be in a concentration of from 1×10 15 to 5×10 15 cm −3 to compensate for residual n-type carriers.
12. The infrared photodetector according to claim 11 , wherein the Be is incorporated into the superlattice material in a concentration of about 2.5×10 15 cm −3 .
13. The infrared photodetector according to claim 11 , wherein Sb is in a concentration of around 59%.
14. The infrared photodetector according to claim 11 , further comprising one or more structures selected from the group consisting of contact layers, unipolar barrier layers, and graded transitional structures.