Tray and wafer holding apparatus
A tray includes a support base having both a first face on which a clamp object is placed and a second face opposite the first face, an upper electrode embedded in the support base and situated toward the first face, a lower electrode embedded in the support base and situated further toward the second face than the upper electrode is, and one or more interconnect lines configured to provide an electrical connection between the upper electrode and the lower electrode.
1. A tray, comprising:
a support base having both a first face on which a clamp object is placed and a second face opposite the first face;
an upper electrode embedded in the support base and situated toward the first face;
a lower electrode embedded in the support base and situated further toward the second face than the upper electrode is; and
one or more interconnect lines configured to provide an electrical connection between the upper electrode and the lower electrode,
wherein the upper electrode and the lower electrode are fully enclosed in the support base, and are not exposed to an outside of the support base.
2. The tray as claimed in claim 1 , wherein the support base, the upper electrode, and the lower electrode are configured to clamp the clamp object placed on the first face by way of application of electrostatic potential through the second face.
3. The tray as claimed in claim 1 , wherein the support base is made of dielectric material whose volume resistivity is smaller than 10 13 Ωcm.
4. The tray as claimed in claim 1 , wherein the first face and the second face are faces having undergone grinding.
5. The tray as claimed in claim 1 , wherein the upper electrode includes upper electrode parts, and the first face has a plurality of recesses situated directly above the upper electrode parts, respectively.
6. The tray as claimed in claim 1 , wherein the second face has a recess for accommodating inactive gas.
7. The tray as claimed in claim 1 , wherein the support base is made of dielectric material whose volume resistivity is smaller than 10 13 Ω·cm, the dielectric material being in contact with upper and lower faces of the upper electrode and in contact with upper and lower faces of the lower electrode.
8. A wafer holding apparatus, comprising:
an electrostatic chuck including a support base and an electrostatic electrode embedded therein; and
a tray which includes:
a support base having both a first face on which a clamp object is placed and a second face opposite the first face;
an upper electrode embedded in the support base of the tray and situated toward the first face;
a lower electrode embedded in the support base of the tray and situated further toward the second face than the upper electrode is; and
one or more interconnect lines configured to provide an electrical connection between the upper electrode and the lower electrode,
wherein the electrostatic electrode and the lower electrode are disposed to face each other, and the tray is configured to be placed on an upper face of the support base of the electrostatic chuck in a detachable manner, and
wherein the upper electrode and the lower electrode are fully enclosed in the support base, and are not exposed to an outside of the support base.
9. The wafer holding apparatus as claimed in claim 8 , wherein when the clamp object is placed on the first face, and voltage is applied to the electrostatic electrode, the lower electrode is attracted by the electrostatic electrode, so that the tray is clamped to the upper face of the support base of the electrostatic chuck, and the clamp object is attracted by the upper electrode, so that the clamp object is clamped to the first face.
10. The wafer holding apparatus as claimed in claim 8 , wherein the support base of the electrostatic chuck is made of dielectric material whose volume resistivity is smaller than 10 13 Ωcm.
11. The wafer holding apparatus as claimed in claim 8 , wherein the upper face of the support base of the electrostatic chuck is a face having undergone grinding.
12. The wafer holding apparatus as claimed in claim 8 , wherein the electrostatic chuck includes a gas pathway configured to supply inactive gas to the tray.
13. The wafer holding apparatus as claimed in claim 8 , wherein the support base is made of dielectric material whose volume resistivity is smaller than 10 13 Ω·cm, the dielectric material being in contact with upper and lower faces of the upper electrode and in contact with upper and lower faces of the lower electrode.