IP Library › Granted Patent US 9,837,474
Granted Patent B2
US 9,837,474 · App. 14/977,592 · Granted Dec 5, 2017

Organic light emitting diode display

Inventor: Kyung Min Park (Seongnam-si, KR)
Assignee: Samsung Display Co., Ltd.
H01L27/3248H01L27/3223H01L27/3258H01L27/3262H01L51/50H01L27/124H01L27/1233H01L27/1248
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Quick Facts
Patent No.
US 9,837,474
App. No.
14/977,592
Granted
Dec 5, 2017
Kind
B2
Abstract

An organic light emitting diode display includes a substrate including a display area and a non-display area adjacent the display area, a plurality of organic light emitting diodes at the display area of the substrate, a plurality of thin film transistors at the display area of the substrate, each of the plurality of thin film transistors being connected to a corresponding one of the plurality of organic light emitting diodes, and a first insulating layer covering an active layer of the plurality of thin film transistors, the first insulating layer having a greater number of contact holes at an outer region of the display area than at a central area of the display area.

Claims (29)

1. An organic light emitting diode display, comprising:

a substrate comprising a display area and a non-display area adjacent the display area;

a plurality of pixels, each comprising:

an organic light emitting diode at the display area of the substrate; and

a plurality of thin film transistors at the display area of the substrate, respective ones of the plurality of thin film transistors being connected to the organic light emitting diode; and

a first insulating layer covering an active layer of the plurality of thin film transistors of each of the pixels, the first insulating layer having a greater number of contact holes corresponding to ones of the pixels at an outer region of the display area than corresponding to others of the pixels at a central area of the display area.

2. The organic light emitting diode display of claim 1 , wherein

the first insulating layer contacts the active layer.

3. The organic light emitting diode display of claim 1 , wherein the contact holes corresponding to ones of the pixels at an outer region include at least one dummy contact hole.

4. The organic light emitting diode display of claim 3 , wherein

the dummy contact hole overlaps the active layer.

5. The organic light emitting diode display of claim 3 , wherein

the dummy contact hole does not overlap the active layer.

6. The organic light emitting diode display of claim 3 , further comprising a second insulating layer covering the first insulating layer,

wherein the second insulating layer is inside of the dummy contact hole.

7. The organic light emitting diode display of claim 1 , further comprising:

a plurality of data lines extending in one direction on the substrate and connected to the plurality of thin film transistors; and

a data driver at the non-display area of the substrate and connected to the plurality of data lines,

wherein the outer region is adjacent the data driver.

8. The organic light emitting diode display of claim 1 , wherein

the active layer is heat treated in a state in which the active layer is covered with the first insulating layer.

9. The organic light emitting diode display of claim 1 , wherein the active layer comprises a channel region, the channel region being bent at least once.

10. An organic light emitting diode display, comprising:

a substrate comprising a display area and a non-display area adjacent the display area;

a plurality of organic light emitting diodes at the display area of the substrate;

a plurality of thin film transistors at the display area of the substrate, each of the plurality of thin film transistors being connected to a corresponding one of the plurality of organic light emitting diodes; and

a first insulating layer covering an active layer of the plurality of thin film transistors, the first insulating layer having a greater number of contact holes at an outer region of the display area than at a central area of the display area,

wherein the plurality of thin film transistors comprises a central thin film transistor at a central area of the display area and an outer thin film transistor at an outer region of the display area, and

wherein a width of the active layer of the outer thin film transistor is greater than a width of the active layer of the central thin film transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2016
From: PARK, KYUNG MIN
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 038342/0721 →
Priority Claims (1)
KR 10-2015-0003529 · Jan 9, 2015 · national
Continuity (1)
Related Publication 20160204172A1 · Jul 14, 2016