Piezoelectric bulk wave device, and method of manufacturing the piezoelectric bulk wave device
A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO 3 , and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO 3 . The first and second electrodes are each formed by a conductor having a specific acoustic impedance higher than the specific acoustic impedance of a transversal wave that propagates in LiTaO 3 . When the sum of the film thicknesses of the first and second electrodes is defined as an electrode thickness, and the thickness of the piezoelectric thin plate made of LiTaO 3 is defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is not less than 5% and not more than 40%.
1. A piezoelectric bulk wave device comprising:
a piezoelectric plate that is made of LiTaO 3 ; and
first and second electrodes provided in contact with the piezoelectric plate,
wherein the piezoelectric bulk wave device utilizes a thickness shear mode of the piezoelectric plate made of LiTaO 3 ,
wherein the first and second electrodes each comprise a conductor having a specific acoustic impedance higher than a specific acoustic impedance of a transversal wave that propagates in the LiTaO 3 ,
wherein, when a sum of film thicknesses of the first and second electrodes is defined as an electrode thickness, and a thickness of the piezoelectric plate made of LiTaO 3 is defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is not less than 5% and not more than 40%, and
wherein of Euler Angles (φ, θ, φ) of the LiTaO 3 , θ is in a range of not less than 54° and not more than 107°.
2. The piezoelectric bulk wave device according to claim 1 , wherein each of the first and second electrodes is at least one metal selected from the group consisting of W, Mo, Pt, and Ta or an alloy mainly including the at least one metal, or a laminate including the at least one metal and that accounts for more than half of the laminate in weight ratio.
3. The piezoelectric bulk wave device according to claim 1 , wherein of the Euler Angles (φ, θ, φ) of the LiTaO 3 , φ is 0°.
4. The piezoelectric bulk wave device according to claim 3 , wherein the θ of the Euler Angles of the LiTaO 3 is in a range of 55° to 85°.
5. The piezoelectric bulk wave device according to claim 3 , wherein the θ of the Euler Angles of the LiTaO 3 is in a range of 63° to 97°.
6. The piezoelectric bulk wave device according to claim 1 , further comprising:
a support substrate; and
an insulating layer on the support substrate, the insulating layer defining a recess,
the piezoelectric plate being disposed above the recess.
7. A method of manufacturing a piezoelectric bulk wave device, the method comprising:
preparing a piezoelectric plate that is made of LiTaO 3 ;
forming a first electrode in contact with the piezoelectric plate, the first electrode being formed by a conductor having a specific acoustic impedance higher than a specific acoustic impedance of a transversal wave that propagates in the LiTaO 3 ; and
forming a second electrode in contact with the piezoelectric plate, the second electrode being formed by a conductor having a specific acoustic impedance higher than the specific acoustic impedance of the transversal wave that propagates in the LiTaO 3 ,
wherein the piezoelectric bulk wave device utilizes a thickness shear mode of the piezoelectric plate made of LiTaO 3 ,
wherein, when a sum of thicknesses of the first and second electrodes is defined as an electrode thickness, and a thickness of the piezoelectric plate made of LiTaO 3 is defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is not less than 5% and not more than 40%, and
wherein the piezoelectric plate made of LiTaO 3 is prepared so as to have Euler Angles (φ, θ, φ), of which θ is in a range of not less than 54° and not more than 107°.
8. The method of manufacturing a piezoelectric bulk wave device according to claim 7 , wherein the step of preparing the piezoelectric plate includes:
implanting ions from a first side of a piezoelectric substrate made of LiTaO 3 to form a high concentration ion-implanted portion on the first side, the high concentration ion-implanted portion being a portion of highest implanted-ion concentration;
joining a support substrate to the first side of the piezoelectric substrate; and
separating the piezoelectric substrate at the high concentration ion-implanted portion, while heating the piezoelectric substrate, into the piezoelectric plate that extends from the first side of the piezoelectric substrate to the high concentration ion-implanted portion, and a remaining piezoelectric substrate portion.
9. The method of manufacturing a piezoelectric bulk wave device according to claim 7 , wherein:
the step of preparing the piezoelectric plate includes
implanting ions from a first side of a piezoelectric substrate made of LiTaO 3 to form a high concentration ion-implanted portion on the first side, the high concentration ion-implanted portion being a portion of highest implanted-ion concentration,
bonding a temporary support member onto the first side of the piezoelectric substrate, and
separating the piezoelectric substrate at the high concentration ion-implanted portion, while heating the piezoelectric substrate bonded on the temporary support member, into the piezoelectric plate that extends from the first side of the piezoelectric substrate to the high concentration ion-implanted portion, and a remaining piezoelectric substrate portion; and
detaching the temporary support member from the piezoelectric plate.
10. The method of manufacturing a piezoelectric bulk wave device according to claim 9 , wherein:
prior to detaching the temporary support member from the piezoelectric plate, the steps of forming a first electrode on the piezoelectric plate, forming a dummy layer to cover the first electrode, and laminating a support substrate on the dummy layer are performed; and
after detaching the temporary support member from the piezoelectric plate, forming a second electrode on a second side of the piezoelectric plate which is exposed by the detaching of the temporary support member, and causing the dummy layer to disappear.
11. The method of manufacturing a piezoelectric bulk wave device according to claim 7 , wherein, of the Euler Angles (φ, θ, φ), θ is 0°.
12. The method of manufacturing a piezoelectric bulk wave device according to claim 11 , wherein the θ of the Euler Angles is in a range of 55° to 85°.
13. The method of manufacturing a piezoelectric bulk wave device according to claim 11 , wherein the θ of the Euler Angles is in a range of 63° to 97°.
14. The piezoelectric bulk wave device according to claim 1 , further comprising:
a support substrate;
an insulating layer on the support substrate, wherein the piezoelectric plate is on or above the insulting layer; and
a line electrode on the insulating layer,
wherein the line electrode is connected to the second electrode, and the line electrode is spaced apart from a joint interface between the insulating layer and the support substrate.
15. The piezoelectric bulk wave device according to claim 1 , further comprising:
a first line electrode on the piezoelectric plate;
a first gold bump on the first line electrode;
a second line electrode on the piezoelectric plate;
a via-hole electrode in the piezoelectric plate and electrically connected to the second line electrode; and
a second gold bump joined to an end of the via-hole electrode.
16. The piezoelectric bulk wave device according to claim 1 , further comprising:
a support substrate;
an insulating layer on the support substrate, wherein the piezoelectric plate is on or above the insulting layer; and
a recess between the piezoelectric plate and the insulting layer,
wherein a vibrating part of the piezoelectric plate is disposed above the recess.