Silicon carbide powder, method for manufacturing the same and silicon carbide sintered body, method for manufacturing the same
A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.
1. A method for manufacturing a silicon carbide powder, the method comprising:
forming a mixture by mixing a silicon (Si) source containing silicon with a carbon (C) source containing a solid carbon source or an organic carbon compound;
heating the mixture;
cooling the mixture; and
supplying hydrogen gas into the mixture,
wherein the hydrogen gas is supplied during the cooling,
wherein the hydrogen gas removes residual oxygen included in the silicon carbide powder,
wherein the hydrogen gas is supplied at a rate in a range of about 5 L/min to about 10 L/min, and
wherein the hydrogen gas is independently supplied.
2. The method of claim 1 , wherein the silicon source comprises at least one of silica sol, silicon dioxide, fine silica, and quartz powder.
3. The method of claim 2 , wherein the solid carbon source comprises at least one of a carbon black, a carbon nano tube (CNT), and fullerene (C60).
4. The method of claim 2 , wherein the organic carbon compound comprises at least one of phenol resin, franc resin, xylene resin, polyimide, polyurethane, polyacrylonitrile, polyvinyl alcohol, cellulose, pitch, tar and sugar.
5. The method of claim 1 , wherein the carbon source and the silicon source are mixed with a wet mixing process.
6. The method of claim 1 , wherein the carbon source and the silicon source are mixed with a dry mixing process.
7. The method of claim 1 , wherein the silicon source and the carbon source are mixed by using a ball mill or an attrition mill.
8. The method of claim 1 , wherein a mole ratio of carbon included in the carbon source to silicon included in the silicon source is in the range of about 1:1.5 to 1:3.
9. The method of claim 1 , wherein a mole ratio of carbon included in the carbon source to silicon included in the silicon source is in the range of about 1:1.8 to 1:2.7.
10. The method of claim 1 , wherein the heating the mixture comprises a carbonization process and a synthesis process.
11. The method of claim 10 , wherein the carbonization process is performed at a temperature in the range of 600° C. to 1200° C.
12. The method of claim 10 , wherein the carbonization process is performed at a temperature in the range of 800° C. to 1100° C.
13. The method of claim 10 , wherein the synthesis process is performed at a temperature in a range of 1300° C. to 1900° C.